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Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes

Yaonan Hou, Z. Ahmed Syed Orcid Logo, L. Jiu, J. Bai, T. Wang

Applied Physics Letters, Volume: 111, Issue: 20

Swansea University Author: Yaonan Hou

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DOI (Published version): 10.1063/1.5001938

Abstract

Two types of GaN based photoelectrodes using either horizontally aligned or vertically aligned nanopores have been fabricated by means of using an electrochemical etching approach. The photoelectrodes based on such nanostructures have demonstrated an up to 5-fold enhancement in applied bias photon-t...

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Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: AIP Publishing 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa65302
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spelling v2 65302 2023-12-14 Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes 113975f710084997abdb26ad5fa03e8e Yaonan Hou Yaonan Hou true false 2023-12-14 EEEG Two types of GaN based photoelectrodes using either horizontally aligned or vertically aligned nanopores have been fabricated by means of using an electrochemical etching approach. The photoelectrodes based on such nanostructures have demonstrated an up to 5-fold enhancement in applied bias photon-to-current efficiency and incident photon-to-current efficiency in comparison with their planar counterpart, leading to a high Faradaic conversion efficiency which approaches 1. The GaN photoelectrodes with these nanopores also show excellent chemical stability in HBr solution as an electrolyte. The results presented reveal that the gas diffusion in the nanopores plays an important role in water splitting processes, which should be taken into account when designing a GaN photoelectrode with a nanopore structure. Journal Article Applied Physics Letters 111 20 AIP Publishing 0003-6951 1077-3118 14 11 2017 2017-11-14 10.1063/1.5001938 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University Another institution paid the OA fee This work was supported by the UK Engineering and Physical Sciences Research Council (EPSRC) via Grant Nos. EP/M015181/1 and EP/L017024/1. 2024-04-09T13:24:01.6941543 2023-12-14T16:26:07.5716871 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Yaonan Hou 1 Z. Ahmed Syed 0000-0002-4233-9753 2 L. Jiu 3 J. Bai 4 T. Wang 5 65302__29959__d5d98bc72cad401aaf42bf76f0a8c737.pdf 65302.VOR.pdf 2024-04-09T13:22:42.3964688 Output 1468007 application/pdf Version of Record true Copyright 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. true eng http://creativecommons.org/licenses/by/4.0/
title Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes
spellingShingle Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes
Yaonan Hou
title_short Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes
title_full Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes
title_fullStr Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes
title_full_unstemmed Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes
title_sort Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 Yaonan Hou
Z. Ahmed Syed
L. Jiu
J. Bai
T. Wang
format Journal article
container_title Applied Physics Letters
container_volume 111
container_issue 20
publishDate 2017
institution Swansea University
issn 0003-6951
1077-3118
doi_str_mv 10.1063/1.5001938
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Two types of GaN based photoelectrodes using either horizontally aligned or vertically aligned nanopores have been fabricated by means of using an electrochemical etching approach. The photoelectrodes based on such nanostructures have demonstrated an up to 5-fold enhancement in applied bias photon-to-current efficiency and incident photon-to-current efficiency in comparison with their planar counterpart, leading to a high Faradaic conversion efficiency which approaches 1. The GaN photoelectrodes with these nanopores also show excellent chemical stability in HBr solution as an electrolyte. The results presented reveal that the gas diffusion in the nanopores plays an important role in water splitting processes, which should be taken into account when designing a GaN photoelectrode with a nanopore structure.
published_date 2017-11-14T13:23:58Z
_version_ 1795859875057631232
score 11.036553

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