No Cover Image

Journal article 197 views

Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells

M. Montanari, M. Virgilio, C. L. Manganelli, P. Zaumseil, M. H. Zoellner, Yaonan Hou Orcid Logo, M. A. Schubert, L. Persichetti, L. Di Gaspare, M. De Seta, E. Vitiello, E. Bonera, F. Pezzoli, G. Capellini

Physical Review B, Volume: 98, Issue: 19

Swansea University Author: Yaonan Hou Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1103/physrevb.98.195310

Published in: Physical Review B
ISSN: 2469-9950 2469-9969
Published: American Physical Society (APS) 2018
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa65293
first_indexed 2024-04-10T13:45:23Z
last_indexed 2024-11-25T14:15:46Z
id cronfa65293
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2024-04-10T14:45:26.6006912</datestamp><bib-version>v2</bib-version><id>65293</id><entry>2023-12-14</entry><title>Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells</title><swanseaauthors><author><sid>113975f710084997abdb26ad5fa03e8e</sid><ORCID>0000-0001-9461-3841</ORCID><firstname>Yaonan</firstname><surname>Hou</surname><name>Yaonan Hou</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2023-12-14</date><deptcode>ACEM</deptcode><abstract/><type>Journal Article</type><journal>Physical Review B</journal><volume>98</volume><journalNumber>19</journalNumber><paginationStart/><paginationEnd/><publisher>American Physical Society (APS)</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>2469-9950</issnPrint><issnElectronic>2469-9969</issnElectronic><keywords/><publishedDay>19</publishedDay><publishedMonth>11</publishedMonth><publishedYear>2018</publishedYear><publishedDate>2018-11-19</publishedDate><doi>10.1103/physrevb.98.195310</doi><url/><notes/><college>COLLEGE NANME</college><department>Aerospace, Civil, Electrical, and Mechanical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>ACEM</DepartmentCode><institution>Swansea University</institution><apcterm/><funders>Part of this work was supported by the European Union Research and Innovation programme Horizon 2020 under Grant No. 766719&#x2014;FLASH Project.</funders><projectreference/><lastEdited>2024-04-10T14:45:26.6006912</lastEdited><Created>2023-12-14T16:12:41.2537606</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>M.</firstname><surname>Montanari</surname><order>1</order></author><author><firstname>M.</firstname><surname>Virgilio</surname><order>2</order></author><author><firstname>C. L.</firstname><surname>Manganelli</surname><order>3</order></author><author><firstname>P.</firstname><surname>Zaumseil</surname><order>4</order></author><author><firstname>M. H.</firstname><surname>Zoellner</surname><order>5</order></author><author><firstname>Yaonan</firstname><surname>Hou</surname><orcid>0000-0001-9461-3841</orcid><order>6</order></author><author><firstname>M. A.</firstname><surname>Schubert</surname><order>7</order></author><author><firstname>L.</firstname><surname>Persichetti</surname><order>8</order></author><author><firstname>L. Di</firstname><surname>Gaspare</surname><order>9</order></author><author><firstname>M. De</firstname><surname>Seta</surname><order>10</order></author><author><firstname>E.</firstname><surname>Vitiello</surname><order>11</order></author><author><firstname>E.</firstname><surname>Bonera</surname><order>12</order></author><author><firstname>F.</firstname><surname>Pezzoli</surname><order>13</order></author><author><firstname>G.</firstname><surname>Capellini</surname><order>14</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2024-04-10T14:45:26.6006912 v2 65293 2023-12-14 Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 113975f710084997abdb26ad5fa03e8e 0000-0001-9461-3841 Yaonan Hou Yaonan Hou true false 2023-12-14 ACEM Journal Article Physical Review B 98 19 American Physical Society (APS) 2469-9950 2469-9969 19 11 2018 2018-11-19 10.1103/physrevb.98.195310 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Part of this work was supported by the European Union Research and Innovation programme Horizon 2020 under Grant No. 766719—FLASH Project. 2024-04-10T14:45:26.6006912 2023-12-14T16:12:41.2537606 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering M. Montanari 1 M. Virgilio 2 C. L. Manganelli 3 P. Zaumseil 4 M. H. Zoellner 5 Yaonan Hou 0000-0001-9461-3841 6 M. A. Schubert 7 L. Persichetti 8 L. Di Gaspare 9 M. De Seta 10 E. Vitiello 11 E. Bonera 12 F. Pezzoli 13 G. Capellini 14
title Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
spellingShingle Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
Yaonan Hou
title_short Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
title_full Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
title_fullStr Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
title_full_unstemmed Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
title_sort Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 M. Montanari
M. Virgilio
C. L. Manganelli
P. Zaumseil
M. H. Zoellner
Yaonan Hou
M. A. Schubert
L. Persichetti
L. Di Gaspare
M. De Seta
E. Vitiello
E. Bonera
F. Pezzoli
G. Capellini
format Journal article
container_title Physical Review B
container_volume 98
container_issue 19
publishDate 2018
institution Swansea University
issn 2469-9950
2469-9969
doi_str_mv 10.1103/physrevb.98.195310
publisher American Physical Society (APS)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2018-11-19T05:31:33Z
_version_ 1821382272542048256
score 11.04748

Similar Items