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High-performance self-powered ultraviolet photodetector based on PVK/amorphous-WO3 organic-inorganic heterojunction
Applied Surface Science, Volume: 643, Start page: 158641
Swansea University Author: Vincent Teng
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DOI (Published version): 10.1016/j.apsusc.2023.158641
Abstract
Ultraviolet (UV) photodetectors have found wide-ranging applications, ranging from optical communications to chemical detection. High performance UV photodetectors that can be self-powered are highly desirable in many applications as they can minimize energy consumption during operation. Herein, a s...
Published in: | Applied Surface Science |
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ISSN: | 0169-4332 1873-5584 |
Published: |
Elsevier BV
2024
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Online Access: |
Check full text
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URI: | https://cronfa.swan.ac.uk/Record/cronfa64767 |
Abstract: |
Ultraviolet (UV) photodetectors have found wide-ranging applications, ranging from optical communications to chemical detection. High performance UV photodetectors that can be self-powered are highly desirable in many applications as they can minimize energy consumption during operation. Herein, a self-powered UV photodetector, which consisted of poly(9-vinylcarbazole) (PVK)/amorphous-WO3 organic-inorganic heterojunction with PEDOT:PSS as a hole transport layer, was fabricated using a two-step method at low temperature. The effect of WO3, PVK and PEDOT:PSS films on the performances of the photodetector was also investigated. Under optimized parameters, the PEDOT:PSS/PVK/WO3 photodetector exhibited a maximum responsivity of 12.41 AW−1, specific detectivity of 1.80 × 1013 Jones, photo-dark current ratio of 103 at reverse bias and typical rectification characteristic when exposed to 365 nm light irradiation. The photoelectric conversion mechanism of this novel PVK/WO3 heterojunction is discussed using energy band diagrams. This work presents a method to produce a high performance WO3-based heterostructure at low temperature, which has the potential for UV imaging. |
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Keywords: |
Self-powered, UV photodetector, Organic-inorganic, PVK/WO3 heterojunction, Low temperature |
College: |
Faculty of Science and Engineering |
Funders: |
This work was supported by the National Natural Science Foundation of China (Nos. 61106098, 11864044, 61965016, 61765015, 62241506 and 62175209); the Research Innovation Fund for Graduate Students of Yunnan University, China (No. KC-22221203) and the Key Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering. |
Start Page: |
158641 |