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Mid-gap trap state-mediated dark current in organic photodiodes

Oskar Sandberg Orcid Logo, Christina Kaiser, Stefan Zeiske, Nasim Zarrabi, Sam Gielen, Wouter Maes Orcid Logo, Koen Vandewal Orcid Logo, Paul Meredith Orcid Logo, Ardalan Armin Orcid Logo

Nature Photonics, Volume: 17, Issue: 4, Pages: 368 - 374

Swansea University Authors: Oskar Sandberg Orcid Logo, Paul Meredith Orcid Logo, Ardalan Armin Orcid Logo

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DOI (Published version): 10.1038/s41566-023-01173-5

Abstract

Photodiodes are ubiquitous in industry and consumer electronics. Constantly emerging new applications for photodiodes demand different mechanical and optoelectronic properties from those provided by conventional inorganic-based semiconductor devices. This has stimulated considerable interest in the...

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Published in: Nature Photonics
ISSN: 1749-4885 1749-4893
Published: Springer Science and Business Media LLC 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa63125
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Constantly emerging new applications for photodiodes demand different mechanical and optoelectronic properties from those provided by conventional inorganic-based semiconductor devices. This has stimulated considerable interest in the use of organic semiconductors, which provide a vast palette of available optoelectronic properties, can be incorporated into flexible form factor geometries, and promise low-cost, low-embodied energy manufacturing from earth-abundant materials. The sensitivity of a photodiode depends critically on the dark current. Organic photodiodes (OPDs), however, are characterized by a much higher dark current than expected for thermally excited radiative transitions. Here we show that the dark saturation current in OPDs is fundamentally limited by mid-gap trap states. This new insight is generated by the universal trend observed for the dark saturation current of a large set of OPDs and further substantiated by sensitive external-quantum-efficiency- and temperature-dependent current measurements. Based on this insight, an upper limit for the specific detectivity is established. A detailed understanding of the origins of noise in any detector is fundamental to defining performance limitations and thus is critical to materials and device selection, and design and optimization for all applications. 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spelling v2 63125 2023-04-12 Mid-gap trap state-mediated dark current in organic photodiodes 9e91512a54d5aee66cd77851a96ba747 0000-0003-3778-8746 Oskar Sandberg Oskar Sandberg true false 31e8fe57fa180d418afd48c3af280c2e 0000-0002-9049-7414 Paul Meredith Paul Meredith true false 22b270622d739d81e131bec7a819e2fd 0000-0002-6129-5354 Ardalan Armin Ardalan Armin true false 2023-04-12 SPH Photodiodes are ubiquitous in industry and consumer electronics. Constantly emerging new applications for photodiodes demand different mechanical and optoelectronic properties from those provided by conventional inorganic-based semiconductor devices. This has stimulated considerable interest in the use of organic semiconductors, which provide a vast palette of available optoelectronic properties, can be incorporated into flexible form factor geometries, and promise low-cost, low-embodied energy manufacturing from earth-abundant materials. The sensitivity of a photodiode depends critically on the dark current. Organic photodiodes (OPDs), however, are characterized by a much higher dark current than expected for thermally excited radiative transitions. Here we show that the dark saturation current in OPDs is fundamentally limited by mid-gap trap states. This new insight is generated by the universal trend observed for the dark saturation current of a large set of OPDs and further substantiated by sensitive external-quantum-efficiency- and temperature-dependent current measurements. Based on this insight, an upper limit for the specific detectivity is established. A detailed understanding of the origins of noise in any detector is fundamental to defining performance limitations and thus is critical to materials and device selection, and design and optimization for all applications. Our work establishes these important principles for OPDs. Journal Article Nature Photonics 17 4 368 374 Springer Science and Business Media LLC 1749-4885 1749-4893 Photonic devices, Polymers 1 4 2023 2023-04-01 10.1038/s41566-023-01173-5 http://dx.doi.org/10.1038/s41566-023-01173-5 COLLEGE NANME Physics COLLEGE CODE SPH Swansea University External research funder(s) paid the OA fee (includes OA grants disbursed by the Library) EPSRC EP/T028513/1 2023-05-18T14:39:54.7540183 2023-04-12T12:18:59.3489422 Faculty of Science and Engineering School of Biosciences, Geography and Physics - Physics Oskar Sandberg 0000-0003-3778-8746 1 Christina Kaiser 2 Stefan Zeiske 3 Nasim Zarrabi 4 Sam Gielen 5 Wouter Maes 0000-0001-7883-3393 6 Koen Vandewal 0000-0001-5471-383x 7 Paul Meredith 0000-0002-9049-7414 8 Ardalan Armin 0000-0002-6129-5354 9 63125__27016__34239cc15c6e46138e10b31043e8fc0a.pdf 63125.pdf 2023-04-12T12:39:29.5903962 Output 1837987 application/pdf Version of Record true This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. true eng http://creativecommons.org/licenses/by/4.0/
title Mid-gap trap state-mediated dark current in organic photodiodes
spellingShingle Mid-gap trap state-mediated dark current in organic photodiodes
Oskar Sandberg
Paul Meredith
Ardalan Armin
title_short Mid-gap trap state-mediated dark current in organic photodiodes
title_full Mid-gap trap state-mediated dark current in organic photodiodes
title_fullStr Mid-gap trap state-mediated dark current in organic photodiodes
title_full_unstemmed Mid-gap trap state-mediated dark current in organic photodiodes
title_sort Mid-gap trap state-mediated dark current in organic photodiodes
author_id_str_mv 9e91512a54d5aee66cd77851a96ba747
31e8fe57fa180d418afd48c3af280c2e
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author_id_fullname_str_mv 9e91512a54d5aee66cd77851a96ba747_***_Oskar Sandberg
31e8fe57fa180d418afd48c3af280c2e_***_Paul Meredith
22b270622d739d81e131bec7a819e2fd_***_Ardalan Armin
author Oskar Sandberg
Paul Meredith
Ardalan Armin
author2 Oskar Sandberg
Christina Kaiser
Stefan Zeiske
Nasim Zarrabi
Sam Gielen
Wouter Maes
Koen Vandewal
Paul Meredith
Ardalan Armin
format Journal article
container_title Nature Photonics
container_volume 17
container_issue 4
container_start_page 368
publishDate 2023
institution Swansea University
issn 1749-4885
1749-4893
doi_str_mv 10.1038/s41566-023-01173-5
publisher Springer Science and Business Media LLC
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Biosciences, Geography and Physics - Physics{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Biosciences, Geography and Physics - Physics
url http://dx.doi.org/10.1038/s41566-023-01173-5
document_store_str 1
active_str 0
description Photodiodes are ubiquitous in industry and consumer electronics. Constantly emerging new applications for photodiodes demand different mechanical and optoelectronic properties from those provided by conventional inorganic-based semiconductor devices. This has stimulated considerable interest in the use of organic semiconductors, which provide a vast palette of available optoelectronic properties, can be incorporated into flexible form factor geometries, and promise low-cost, low-embodied energy manufacturing from earth-abundant materials. The sensitivity of a photodiode depends critically on the dark current. Organic photodiodes (OPDs), however, are characterized by a much higher dark current than expected for thermally excited radiative transitions. Here we show that the dark saturation current in OPDs is fundamentally limited by mid-gap trap states. This new insight is generated by the universal trend observed for the dark saturation current of a large set of OPDs and further substantiated by sensitive external-quantum-efficiency- and temperature-dependent current measurements. Based on this insight, an upper limit for the specific detectivity is established. A detailed understanding of the origins of noise in any detector is fundamental to defining performance limitations and thus is critical to materials and device selection, and design and optimization for all applications. Our work establishes these important principles for OPDs.
published_date 2023-04-01T14:39:53Z
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