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Mid-gap trap state-mediated dark current in organic photodiodes
Nature Photonics, Volume: 17, Issue: 4, Pages: 368 - 374
Swansea University Authors: Oskar Sandberg , CHRISTINA KAISER, Stefan Zeiske, Paul Meredith , Ardalan Armin
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DOI (Published version): 10.1038/s41566-023-01173-5
Abstract
Photodiodes are ubiquitous in industry and consumer electronics. New applications for photodiodes are constantly emerging, such as the internet of things and wearable electronics that demand different mechanical and optoelectronic properties from those provided by conventional inorganic devices. Thi...
Published in: | Nature Photonics |
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ISSN: | 1749-4885 1749-4893 |
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Springer Science and Business Media LLC
2023
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URI: | https://cronfa.swan.ac.uk/Record/cronfa62816 |
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This new insight is generated from temperature dependent dark current measurements of narrow-gap photodiodes for the near-infrared. Based on Shockley-Read-Hall statistics, a diode equation is derived which can be used to determine an upper limit for the specific detectivity and to explain the general trend observed for the light to dark current ratio as a function of the experimental open-circuit voltage for a series of organic photodiodes. A detailed understanding of the origins of noise in any detector is fundamental to defining performance limitations and thus is critical to materials and device selection, design and optimisation for all applications. 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2024-10-18T16:47:26.4291096 v2 62816 2023-03-07 Mid-gap trap state-mediated dark current in organic photodiodes 9e91512a54d5aee66cd77851a96ba747 0000-0003-3778-8746 Oskar Sandberg Oskar Sandberg true false dd1e83902e695cade3f07fbb6180c7f8 CHRISTINA KAISER CHRISTINA KAISER true false 0c9c5b89df9ac882c3e09dd1a9f28fc5 Stefan Zeiske Stefan Zeiske true false 31e8fe57fa180d418afd48c3af280c2e 0000-0002-9049-7414 Paul Meredith Paul Meredith true false 22b270622d739d81e131bec7a819e2fd Ardalan Armin Ardalan Armin true false 2023-03-07 BGPS Photodiodes are ubiquitous in industry and consumer electronics. New applications for photodiodes are constantly emerging, such as the internet of things and wearable electronics that demand different mechanical and optoelectronic properties from those provided by conventional inorganic devices. This has stimulated considerable interest in the use of next generation semiconductors, particularly the organics, which provide a vast palette of available optoelectronic properties, can be incorporated into flexible form factor geometries, and promise extremely low cost, low embodied energy manufacturing from earth abundant materials. The sensitivity of a photodiode to low light intensities (typically important in these new applications) depends critically on the dark current. Organic photodiodes, however, are characterized by a much higher dark current than expected for thermally excited band-toband transitions. Here, we show that the lower limit of the dark current is given by recombination via mid-gap trap states. This new insight is generated from temperature dependent dark current measurements of narrow-gap photodiodes for the near-infrared. Based on Shockley-Read-Hall statistics, a diode equation is derived which can be used to determine an upper limit for the specific detectivity and to explain the general trend observed for the light to dark current ratio as a function of the experimental open-circuit voltage for a series of organic photodiodes. A detailed understanding of the origins of noise in any detector is fundamental to defining performance limitations and thus is critical to materials and device selection, design and optimisation for all applications. Our work establishes these important principles for organic semiconductor photodiodes for the near-infrared. Journal Article Nature Photonics 17 4 368 374 Springer Science and Business Media LLC 1749-4885 1749-4893 Electronic Materials and Devices, Nanoscience, organic photodiodes, electronics, nanoscience 1 4 2023 2023-04-01 10.1038/s41566-023-01173-5 COLLEGE NANME Biosciences Geography and Physics School COLLEGE CODE BGPS Swansea University External research funder(s) paid the OA fee (includes OA grants disbursed by the Library) This work was funded through the Welsh Government’s Sêr Cymru II Program ‘Sustainable Advanced Materials’ (Welsh European Funding Office—European Regional Development Fund). C.K. is recipient of a UKRI EPSRC Doctoral Training Program studentship. P.M. is a Sêr Cymru II Research Chair and A.A. is a Rising Star Fellow also funded through the Welsh Government’s Sêr Cymru II ‘Sustainable Advanced Materials’ Program (European Regional Development Fund, Welsh European Funding Office and Swansea University Strategic Initiative). This work was also funded by UKRI through the EPSRC Programme grant EP/T028513/1 Application Targeted Integrated Photovoltaics. S.G. acknowledges the Research Foundation–Flanders (FWO Vlaanderen) for granting him a PhD fellowship. K.V. and W.M. are grateful for project funding by the FWO (G0D0118N, G0B2718N and GOH3816NAUHL). 2024-10-18T16:47:26.4291096 2023-03-07T11:22:17.4510271 Faculty of Science and Engineering School of Biosciences, Geography and Physics - Physics Oskar Sandberg 0000-0003-3778-8746 1 CHRISTINA KAISER 2 Stefan Zeiske 3 Nasim Zarrabi 4 Sam Gielen 5 Wouter Maes 0000-0001-7883-3393 6 Koen Vandewal 0000-0001-5471-383x 7 Paul Meredith 0000-0002-9049-7414 8 Ardalan Armin 9 62816__28164__58587919369147fe97657f324f898658.pdf 62816.VOR.pdf 2023-07-24T16:56:47.2191759 Output 1837987 application/pdf Version of Record true Distributed under the terms of a Creative Commons Attribution 4.0 License (CC BY 4.0). true eng https://creativecommons.org/licenses/by/4.0/ |
title |
Mid-gap trap state-mediated dark current in organic photodiodes |
spellingShingle |
Mid-gap trap state-mediated dark current in organic photodiodes Oskar Sandberg CHRISTINA KAISER Stefan Zeiske Paul Meredith Ardalan Armin |
title_short |
Mid-gap trap state-mediated dark current in organic photodiodes |
title_full |
Mid-gap trap state-mediated dark current in organic photodiodes |
title_fullStr |
Mid-gap trap state-mediated dark current in organic photodiodes |
title_full_unstemmed |
Mid-gap trap state-mediated dark current in organic photodiodes |
title_sort |
Mid-gap trap state-mediated dark current in organic photodiodes |
author_id_str_mv |
9e91512a54d5aee66cd77851a96ba747 dd1e83902e695cade3f07fbb6180c7f8 0c9c5b89df9ac882c3e09dd1a9f28fc5 31e8fe57fa180d418afd48c3af280c2e 22b270622d739d81e131bec7a819e2fd |
author_id_fullname_str_mv |
9e91512a54d5aee66cd77851a96ba747_***_Oskar Sandberg dd1e83902e695cade3f07fbb6180c7f8_***_CHRISTINA KAISER 0c9c5b89df9ac882c3e09dd1a9f28fc5_***_Stefan Zeiske 31e8fe57fa180d418afd48c3af280c2e_***_Paul Meredith 22b270622d739d81e131bec7a819e2fd_***_Ardalan Armin |
author |
Oskar Sandberg CHRISTINA KAISER Stefan Zeiske Paul Meredith Ardalan Armin |
author2 |
Oskar Sandberg CHRISTINA KAISER Stefan Zeiske Nasim Zarrabi Sam Gielen Wouter Maes Koen Vandewal Paul Meredith Ardalan Armin |
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Nature Photonics |
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10.1038/s41566-023-01173-5 |
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Springer Science and Business Media LLC |
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description |
Photodiodes are ubiquitous in industry and consumer electronics. New applications for photodiodes are constantly emerging, such as the internet of things and wearable electronics that demand different mechanical and optoelectronic properties from those provided by conventional inorganic devices. This has stimulated considerable interest in the use of next generation semiconductors, particularly the organics, which provide a vast palette of available optoelectronic properties, can be incorporated into flexible form factor geometries, and promise extremely low cost, low embodied energy manufacturing from earth abundant materials. The sensitivity of a photodiode to low light intensities (typically important in these new applications) depends critically on the dark current. Organic photodiodes, however, are characterized by a much higher dark current than expected for thermally excited band-toband transitions. Here, we show that the lower limit of the dark current is given by recombination via mid-gap trap states. This new insight is generated from temperature dependent dark current measurements of narrow-gap photodiodes for the near-infrared. Based on Shockley-Read-Hall statistics, a diode equation is derived which can be used to determine an upper limit for the specific detectivity and to explain the general trend observed for the light to dark current ratio as a function of the experimental open-circuit voltage for a series of organic photodiodes. A detailed understanding of the origins of noise in any detector is fundamental to defining performance limitations and thus is critical to materials and device selection, design and optimisation for all applications. Our work establishes these important principles for organic semiconductor photodiodes for the near-infrared. |
published_date |
2023-04-01T20:20:18Z |
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11.04748 |