Creating metal saturated growth in MOCVD for CdTe solar cells

Irvine, Stuart; Oklobia, Ochai; Jones, Steven; Lamb, David; Kartopu, Giray; Lu, D.; Xiong, G.

doi:10.1016/j.jcrysgro.2023.127124

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Creating metal saturated growth in MOCVD for CdTe solar cells

Stuart Irvine, Ochai Oklobia, Steven Jones, David Lamb

, Giray Kartopu, D. Lu, G. Xiong

Journal of Crystal Growth, Volume: 607, Start page: 127124

Swansea University Authors: Stuart Irvine, Ochai Oklobia, Steven Jones, David Lamb , Giray Kartopu

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DOI (Published version): 10.1016/j.jcrysgro.2023.127124

Abstract

Determining the thermodynamic conditions in MOCVD growth of II-VI semiconductor materials is not as straightforward as in III-V growth where Group V hydrides are generally used. This paper establishes a technique, using in situ laser reflectometry, to ensure that the thermodynamic equilibrium is und...

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Published in:	Journal of Crystal Growth
ISSN:	0022-0248
Published:	Elsevier BV 2023
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URI:	https://cronfa.swan.ac.uk/Record/cronfa62584
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This paper establishes a technique, using in situ laser reflectometry, to ensure that the thermodynamic equilibrium is under metal saturated growth. This has been applied to the arsenic doping of CdTe solar cells where it was shown that increasing the II/VI precursor ratio resulted in an increase in As dopant incorporation. The growth kinetics were determined by the diisopropyl tellurium (DIPTe) concentration for II/VI precursor ratios above 2. A method is presented where the change in II/VI precursor ratio can be predicted for different positions in a horizontal MOCVD chamber that has, in turn, enabled variation in NA and the solar cell open circuit voltage (Voc) to be determined as a function of the II/VI precursor ratio. 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spelling	v2 62584 2023-02-06 Creating metal saturated growth in MOCVD for CdTe solar cells 1ddb966eccef99aa96e87f1ea4917f1f Stuart Irvine Stuart Irvine true false d447e8d0345473fa625813546bccc592 Ochai Oklobia Ochai Oklobia true false 47e09369e843bd6b9bec0f27016e9f70 Steven Jones Steven Jones true false 1dc64e55c2c28d107ef7c3db984cccd2 0000-0001-5446-2997 David Lamb David Lamb true false 5c4917e0a29801844ec31737672f930c Giray Kartopu Giray Kartopu true false 2023-02-06 Determining the thermodynamic conditions in MOCVD growth of II-VI semiconductor materials is not as straightforward as in III-V growth where Group V hydrides are generally used. This paper establishes a technique, using in situ laser reflectometry, to ensure that the thermodynamic equilibrium is under metal saturated growth. This has been applied to the arsenic doping of CdTe solar cells where it was shown that increasing the II/VI precursor ratio resulted in an increase in As dopant incorporation. The growth kinetics were determined by the diisopropyl tellurium (DIPTe) concentration for II/VI precursor ratios above 2. A method is presented where the change in II/VI precursor ratio can be predicted for different positions in a horizontal MOCVD chamber that has, in turn, enabled variation in NA and the solar cell open circuit voltage (Voc) to be determined as a function of the II/VI precursor ratio. This gives new insight to the thermodynamic drivers in MOCVD growth for improved solar cell Voc and is a method that could be applied to MOCVD of other II-VI semiconductors. Journal Article Journal of Crystal Growth 607 127124 Elsevier BV 0022-0248 A1. Phase equilibria; A3. Metal organic chemical vapour deposition; B1. Cadmium compounds; B2. Semiconducting cadmium compounds; B2. Semiconducting II–VI materials; B3. Solar cells 1 4 2023 2023-04-01 10.1016/j.jcrysgro.2023.127124 COLLEGE NANME COLLEGE CODE Swansea University The authors would like to acknowledge funding by the Engineering and Physical Sciences Research Council (EPSRC), United Kingdom via the grant EP/W000555/1 and from the European Regional Development Fund (ERDF) and the Welsh European Funding Office (WEFO) for funding the 2nd Solar Photovoltaic Academic Research Consortium (SPARC II) which supported this research. The authors also acknowledge support from First Solar Inc. 2024-07-29T13:23:53.1423401 2023-02-06T11:49:40.1685285 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Stuart Irvine 1 Ochai Oklobia 2 Steven Jones 3 David Lamb 0000-0001-5446-2997 4 Giray Kartopu 5 D. Lu 6 G. Xiong 7 62584__26479__b897d55ca1b341dcaf43dabd7937cbc8.pdf 62584.pdf 2023-02-06T11:53:17.2172674 Output 818545 application/pdf Accepted Manuscript true 2024-02-02T00:00:00.0000000 ©2023 All rights reserved. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND) true eng https://creativecommons.org/licenses/by-nc-nd/4.0/
title	Creating metal saturated growth in MOCVD for CdTe solar cells
spellingShingle	Creating metal saturated growth in MOCVD for CdTe solar cells Stuart Irvine Ochai Oklobia Steven Jones David Lamb Giray Kartopu
title_short	Creating metal saturated growth in MOCVD for CdTe solar cells
title_full	Creating metal saturated growth in MOCVD for CdTe solar cells
title_fullStr	Creating metal saturated growth in MOCVD for CdTe solar cells
title_full_unstemmed	Creating metal saturated growth in MOCVD for CdTe solar cells
title_sort	Creating metal saturated growth in MOCVD for CdTe solar cells
author_id_str_mv	1ddb966eccef99aa96e87f1ea4917f1f d447e8d0345473fa625813546bccc592 47e09369e843bd6b9bec0f27016e9f70 1dc64e55c2c28d107ef7c3db984cccd2 5c4917e0a29801844ec31737672f930c
author_id_fullname_str_mv	1ddb966eccef99aa96e87f1ea4917f1f_*_Stuart Irvine d447e8d0345473fa625813546bccc592__Ochai Oklobia 47e09369e843bd6b9bec0f27016e9f70__Steven Jones 1dc64e55c2c28d107ef7c3db984cccd2__David Lamb 5c4917e0a29801844ec31737672f930c_**_Giray Kartopu
author	Stuart Irvine Ochai Oklobia Steven Jones David Lamb Giray Kartopu
author2	Stuart Irvine Ochai Oklobia Steven Jones David Lamb Giray Kartopu D. Lu G. Xiong
format	Journal article
container_title	Journal of Crystal Growth
container_volume	607
container_start_page	127124
publishDate	2023
institution	Swansea University
issn	0022-0248
doi_str_mv	10.1016/j.jcrysgro.2023.127124
publisher	Elsevier BV
college_str	Faculty of Science and Engineering
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description	Determining the thermodynamic conditions in MOCVD growth of II-VI semiconductor materials is not as straightforward as in III-V growth where Group V hydrides are generally used. This paper establishes a technique, using in situ laser reflectometry, to ensure that the thermodynamic equilibrium is under metal saturated growth. This has been applied to the arsenic doping of CdTe solar cells where it was shown that increasing the II/VI precursor ratio resulted in an increase in As dopant incorporation. The growth kinetics were determined by the diisopropyl tellurium (DIPTe) concentration for II/VI precursor ratios above 2. A method is presented where the change in II/VI precursor ratio can be predicted for different positions in a horizontal MOCVD chamber that has, in turn, enabled variation in NA and the solar cell open circuit voltage (Voc) to be determined as a function of the II/VI precursor ratio. This gives new insight to the thermodynamic drivers in MOCVD growth for improved solar cell Voc and is a method that could be applied to MOCVD of other II-VI semiconductors.
published_date	2023-04-01T13:23:52Z
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score	11.037122

Creating metal saturated growth in MOCVD for CdTe solar cells

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