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MOCVD of II-VI HRT/Emitters for Voc Improvements to CdTe Solar Cells

Andrew Clayton Orcid Logo, Ali Abbas, Peter Siderfin, Stephen Jones Orcid Logo, Ana Teloeken, Ochai Oklobia, John M. Walls, Stuart Irvine Orcid Logo

Coatings, Volume: 12, Issue: 2, Start page: 261

Swansea University Authors: Andrew Clayton Orcid Logo, Peter Siderfin, Ana Teloeken, Ochai Oklobia, Stuart Irvine Orcid Logo

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Abstract

CdTe solar cells were produced using metal organic chemical vapour deposition (MOCVD),which employed a (Zn,Al)S (AZS) high resistant transparent (HRT) layer at the transparent conductingoxide (TCO)/Cd(Zn)S emitter interface, to enable the higher annealing temperature of 440 ◦C to beemployed in the c...

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Published in: Coatings
ISSN: 2079-6412
Published: MDPI AG 2022
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URI: https://cronfa.swan.ac.uk/Record/cronfa60732
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The AZS HRT remained intact with conformalcoverage over the TCO after performing the high CHT annealing, confirmed by cross-section scanningtransmission electron microscopy coupled with energy-dispersive X-ray spectroscopy (STEM-EDX)characterisation, which also revealed the Cd(Zn)S emitter layer having been consumed by theCdTe absorber via interdiffusion. The more aggressive CHT resulted in large CdTe grains. 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spelling 2022-08-26T10:38:39.8608394 v2 60732 2022-08-04 MOCVD of II-VI HRT/Emitters for Voc Improvements to CdTe Solar Cells cdef4ab8032ae2213a97638baac8176f 0000-0002-1540-0440 Andrew Clayton Andrew Clayton true false 322dcf7b823e1225dfe9b3d38c59cd22 Peter Siderfin Peter Siderfin true false acd0734fdeda1faebdb330574de96abe Ana Teloeken Ana Teloeken true false d447e8d0345473fa625813546bccc592 Ochai Oklobia Ochai Oklobia true false 1ddb966eccef99aa96e87f1ea4917f1f 0000-0002-1652-4496 Stuart Irvine Stuart Irvine true false 2022-08-04 MTLS CdTe solar cells were produced using metal organic chemical vapour deposition (MOCVD),which employed a (Zn,Al)S (AZS) high resistant transparent (HRT) layer at the transparent conductingoxide (TCO)/Cd(Zn)S emitter interface, to enable the higher annealing temperature of 440 ◦C to beemployed in the chlorine heat treatment (CHT) process. The AZS HRT remained intact with conformalcoverage over the TCO after performing the high CHT annealing, confirmed by cross-section scanningtransmission electron microscopy coupled with energy-dispersive X-ray spectroscopy (STEM-EDX)characterisation, which also revealed the Cd(Zn)S emitter layer having been consumed by theCdTe absorber via interdiffusion. The more aggressive CHT resulted in large CdTe grains. Thecombination of AZS HRT and aggressive CHT increased open circuit voltage (Voc) and improvedsolar cell performance. Journal Article Coatings 12 2 261 MDPI AG 2079-6412 MOCVD; CdTe; photovoltaics; STEM-EDX 16 2 2022 2022-02-16 10.3390/coatings12020261 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University Other Europe Regional Development Fund (ERDF) through the Welsh European Funding Office (WEFO) on the 2nd Solar Photovoltaic Academic Research Consortium (SPARC II) project, case number 81133, and the Engineering and Physical Sciences Research Council (EPSRC) funded project EP/W000555/1 2022-08-26T10:38:39.8608394 2022-08-04T16:19:35.8088516 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Andrew Clayton 0000-0002-1540-0440 1 Ali Abbas 2 Peter Siderfin 3 Stephen Jones 0000-0002-9410-477x 4 Ana Teloeken 5 Ochai Oklobia 6 John M. Walls 7 Stuart Irvine 0000-0002-1652-4496 8 60732__24848__5ca98ce3a7d74154ad8f80e405d6ef1c.pdf 60732.VOR.pdf 2022-08-04T16:23:54.7016401 Output 6966610 application/pdf Version of Record true Copyright: © 2022 by the authors. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license true eng https://creativecommons.org/licenses/by/4.0/
title MOCVD of II-VI HRT/Emitters for Voc Improvements to CdTe Solar Cells
spellingShingle MOCVD of II-VI HRT/Emitters for Voc Improvements to CdTe Solar Cells
Andrew Clayton
Peter Siderfin
Ana Teloeken
Ochai Oklobia
Stuart Irvine
title_short MOCVD of II-VI HRT/Emitters for Voc Improvements to CdTe Solar Cells
title_full MOCVD of II-VI HRT/Emitters for Voc Improvements to CdTe Solar Cells
title_fullStr MOCVD of II-VI HRT/Emitters for Voc Improvements to CdTe Solar Cells
title_full_unstemmed MOCVD of II-VI HRT/Emitters for Voc Improvements to CdTe Solar Cells
title_sort MOCVD of II-VI HRT/Emitters for Voc Improvements to CdTe Solar Cells
author_id_str_mv cdef4ab8032ae2213a97638baac8176f
322dcf7b823e1225dfe9b3d38c59cd22
acd0734fdeda1faebdb330574de96abe
d447e8d0345473fa625813546bccc592
1ddb966eccef99aa96e87f1ea4917f1f
author_id_fullname_str_mv cdef4ab8032ae2213a97638baac8176f_***_Andrew Clayton
322dcf7b823e1225dfe9b3d38c59cd22_***_Peter Siderfin
acd0734fdeda1faebdb330574de96abe_***_Ana Teloeken
d447e8d0345473fa625813546bccc592_***_Ochai Oklobia
1ddb966eccef99aa96e87f1ea4917f1f_***_Stuart Irvine
author Andrew Clayton
Peter Siderfin
Ana Teloeken
Ochai Oklobia
Stuart Irvine
author2 Andrew Clayton
Ali Abbas
Peter Siderfin
Stephen Jones
Ana Teloeken
Ochai Oklobia
John M. Walls
Stuart Irvine
format Journal article
container_title Coatings
container_volume 12
container_issue 2
container_start_page 261
publishDate 2022
institution Swansea University
issn 2079-6412
doi_str_mv 10.3390/coatings12020261
publisher MDPI AG
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 1
active_str 0
description CdTe solar cells were produced using metal organic chemical vapour deposition (MOCVD),which employed a (Zn,Al)S (AZS) high resistant transparent (HRT) layer at the transparent conductingoxide (TCO)/Cd(Zn)S emitter interface, to enable the higher annealing temperature of 440 ◦C to beemployed in the chlorine heat treatment (CHT) process. The AZS HRT remained intact with conformalcoverage over the TCO after performing the high CHT annealing, confirmed by cross-section scanningtransmission electron microscopy coupled with energy-dispersive X-ray spectroscopy (STEM-EDX)characterisation, which also revealed the Cd(Zn)S emitter layer having been consumed by theCdTe absorber via interdiffusion. The more aggressive CHT resulted in large CdTe grains. Thecombination of AZS HRT and aggressive CHT increased open circuit voltage (Voc) and improvedsolar cell performance.
published_date 2022-02-16T04:19:05Z
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