No Cover Image

Journal article 1352 views

Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study

Karol Kalna Orcid Logo, Antonio Martinez Muniz Orcid Logo

IEEE Transactions on Nanotechnology

Swansea University Authors: Karol Kalna Orcid Logo, Antonio Martinez Muniz Orcid Logo

Full text not available from this repository: check for access using links below.

DOI (Published version): 10.1109/TNANO.2008.917776

Published in: IEEE Transactions on Nanotechnology
Published: 2009
URI: https://cronfa.swan.ac.uk/Record/cronfa6070
first_indexed 2013-07-23T11:56:07Z
last_indexed 2018-02-09T04:33:13Z
id cronfa6070
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2011-10-01T00:00:00.0000000</datestamp><bib-version>v2</bib-version><id>6070</id><entry>2013-09-03</entry><title>Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>cd433784251add853672979313f838ec</sid><ORCID>0000-0001-8131-7242</ORCID><firstname>Antonio</firstname><surname>Martinez Muniz</surname><name>Antonio Martinez Muniz</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>ACEM</deptcode><abstract></abstract><type>Journal Article</type><journal>IEEE Transactions on Nanotechnology</journal><volume></volume><journalNumber></journalNumber><paginationStart/><paginationEnd/><publisher/><placeOfPublication/><issnPrint/><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2009</publishedYear><publishedDate>2009-12-31</publishedDate><doi>10.1109/TNANO.2008.917776</doi><url/><notes/><college>COLLEGE NANME</college><department>Aerospace, Civil, Electrical, and Mechanical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>ACEM</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2011-10-01T00:00:00.0000000</lastEdited><Created>2013-09-03T06:36:05.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>1</order></author><author><firstname>Antonio</firstname><surname>Martinez Muniz</surname><orcid>0000-0001-8131-7242</orcid><order>2</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2011-10-01T00:00:00.0000000 v2 6070 2013-09-03 Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 ACEM Journal Article IEEE Transactions on Nanotechnology 31 12 2009 2009-12-31 10.1109/TNANO.2008.917776 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2011-10-01T00:00:00.0000000 2013-09-03T06:36:05.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Karol Kalna 0000-0002-6333-9189 1 Antonio Martinez Muniz 0000-0001-8131-7242 2
title Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
spellingShingle Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
Karol Kalna
Antonio Martinez Muniz
title_short Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
title_full Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
title_fullStr Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
title_full_unstemmed Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
title_sort Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
cd433784251add853672979313f838ec
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Karol Kalna
Antonio Martinez Muniz
author2 Karol Kalna
Antonio Martinez Muniz
format Journal article
container_title IEEE Transactions on Nanotechnology
publishDate 2009
institution Swansea University
doi_str_mv 10.1109/TNANO.2008.917776
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2009-12-31T12:13:27Z
_version_ 1821407557811437568
score 11.048216

Similar Items