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Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure

Liyuan Song, Libin Tang Orcid Logo, Qun Hao, Vincent Teng Orcid Logo, Hao Lv, Jingyu Wang, Jiangmin Feng, Yan Zhou, Wenjin He, Wei Wang

Nanotechnology, Volume: 33, Issue: 42

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1088/1361-6528/ac80cc

Abstract

Combining novel two-dimensional (2D) materials with traditional semiconductors to form heterostructures for photoelectric detection have attracted great attention due to their excellent photoelectric properties. In this study, we reported the formation of a heterostructure comprising of tin tellurid...

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Published in: Nanotechnology
ISSN: 0957-4484 1361-6528
Published: IOP Publishing 2022
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URI: https://cronfa.swan.ac.uk/Record/cronfa60532
first_indexed 2022-07-19T10:30:57Z
last_indexed 2024-11-14T12:17:31Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2024-07-12T15:40:31.5166479</datestamp><bib-version>v2</bib-version><id>60532</id><entry>2022-07-19</entry><title>Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure</title><swanseaauthors><author><sid>98f529f56798da1ba3e6e93d2817c114</sid><ORCID>0000-0003-4325-8573</ORCID><firstname>Vincent</firstname><surname>Teng</surname><name>Vincent Teng</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2022-07-19</date><deptcode>ACEM</deptcode><abstract>Combining novel two-dimensional (2D) materials with traditional semiconductors to form heterostructures for photoelectric detection have attracted great attention due to their excellent photoelectric properties. In this study, we reported the formation of a heterostructure comprising of tin telluride (SnTe) and germanium (Ge) by a simple and efficient one-step magnetron sputtering technique. A photodetector was fabricated by sputtering a nanofilm of SnTe on to a pre-masked n-Ge substrate. J-V measurements obtained from the SnTe/n-Ge photodetector demonstrated diode and photovoltaic characteristics in the visible to nearinfrared band (i.e., 400-2050 nm). Under near-infrared illumination at 850 nm with an optical power density of 13.81 mW/cm2, the SnTe/n-Ge photodetector exhibited a small open-circuit voltage of 0.05 V. It also attained a high responsivity (R) and detectivity (D*) of 617.34 mA/W (at bias voltage of -0.5 V) and 2.33&#xD7;1011 cmHz1/2W-1 (at zero bias), respectively. Therefore, SnTe nanofilm/n-Ge heterostructure is highly suitable for used as low-power broadband photodetector due to its excellent performances and simple device configuration.</abstract><type>Journal Article</type><journal>Nanotechnology</journal><volume>33</volume><journalNumber>42</journalNumber><paginationStart/><paginationEnd/><publisher>IOP Publishing</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0957-4484</issnPrint><issnElectronic>1361-6528</issnElectronic><keywords>SnTe/n-Ge heterostructure, photodetector</keywords><publishedDay>13</publishedDay><publishedMonth>7</publishedMonth><publishedYear>2022</publishedYear><publishedDate>2022-07-13</publishedDate><doi>10.1088/1361-6528/ac80cc</doi><url/><notes/><college>COLLEGE NANME</college><department>Aerospace, Civil, Electrical, and Mechanical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>ACEM</DepartmentCode><institution>Swansea University</institution><apcterm/><funders>This work was supported by the National Key Research and Development Program (No. 2019YFB2203404), the National Natural Science Foundation of China (No. 61106098), the Program for Innovation Team of Yunnan Province (No. 2018HC020).</funders><projectreference/><lastEdited>2024-07-12T15:40:31.5166479</lastEdited><Created>2022-07-19T11:26:50.3814134</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Liyuan</firstname><surname>Song</surname><order>1</order></author><author><firstname>Libin</firstname><surname>Tang</surname><orcid>0000-0002-7174-2963</orcid><order>2</order></author><author><firstname>Qun</firstname><surname>Hao</surname><order>3</order></author><author><firstname>Vincent</firstname><surname>Teng</surname><orcid>0000-0003-4325-8573</orcid><order>4</order></author><author><firstname>Hao</firstname><surname>Lv</surname><order>5</order></author><author><firstname>Jingyu</firstname><surname>Wang</surname><order>6</order></author><author><firstname>Jiangmin</firstname><surname>Feng</surname><order>7</order></author><author><firstname>Yan</firstname><surname>Zhou</surname><order>8</order></author><author><firstname>Wenjin</firstname><surname>He</surname><order>9</order></author><author><firstname>Wei</firstname><surname>Wang</surname><order>10</order></author></authors><documents><document><filename>60532__24771__3696764880754307b3223b557682df83.pdf</filename><originalFilename>60532.pdf</originalFilename><uploaded>2022-07-27T15:17:18.9644545</uploaded><type>Output</type><contentLength>1117131</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2023-07-13T00:00:00.0000000</embargoDate><documentNotes>Released under a CC BY-NC-ND 3.0 licence</documentNotes><copyrightCorrect>true</copyrightCorrect><language>eng</language><licence>https://creativecommons.org/licences/by-nc-nd/3.0</licence></document></documents><OutputDurs/></rfc1807>
spelling 2024-07-12T15:40:31.5166479 v2 60532 2022-07-19 Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2022-07-19 ACEM Combining novel two-dimensional (2D) materials with traditional semiconductors to form heterostructures for photoelectric detection have attracted great attention due to their excellent photoelectric properties. In this study, we reported the formation of a heterostructure comprising of tin telluride (SnTe) and germanium (Ge) by a simple and efficient one-step magnetron sputtering technique. A photodetector was fabricated by sputtering a nanofilm of SnTe on to a pre-masked n-Ge substrate. J-V measurements obtained from the SnTe/n-Ge photodetector demonstrated diode and photovoltaic characteristics in the visible to nearinfrared band (i.e., 400-2050 nm). Under near-infrared illumination at 850 nm with an optical power density of 13.81 mW/cm2, the SnTe/n-Ge photodetector exhibited a small open-circuit voltage of 0.05 V. It also attained a high responsivity (R) and detectivity (D*) of 617.34 mA/W (at bias voltage of -0.5 V) and 2.33×1011 cmHz1/2W-1 (at zero bias), respectively. Therefore, SnTe nanofilm/n-Ge heterostructure is highly suitable for used as low-power broadband photodetector due to its excellent performances and simple device configuration. Journal Article Nanotechnology 33 42 IOP Publishing 0957-4484 1361-6528 SnTe/n-Ge heterostructure, photodetector 13 7 2022 2022-07-13 10.1088/1361-6528/ac80cc COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University This work was supported by the National Key Research and Development Program (No. 2019YFB2203404), the National Natural Science Foundation of China (No. 61106098), the Program for Innovation Team of Yunnan Province (No. 2018HC020). 2024-07-12T15:40:31.5166479 2022-07-19T11:26:50.3814134 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Liyuan Song 1 Libin Tang 0000-0002-7174-2963 2 Qun Hao 3 Vincent Teng 0000-0003-4325-8573 4 Hao Lv 5 Jingyu Wang 6 Jiangmin Feng 7 Yan Zhou 8 Wenjin He 9 Wei Wang 10 60532__24771__3696764880754307b3223b557682df83.pdf 60532.pdf 2022-07-27T15:17:18.9644545 Output 1117131 application/pdf Accepted Manuscript true 2023-07-13T00:00:00.0000000 Released under a CC BY-NC-ND 3.0 licence true eng https://creativecommons.org/licences/by-nc-nd/3.0
title Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure
spellingShingle Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure
Vincent Teng
title_short Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure
title_full Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure
title_fullStr Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure
title_full_unstemmed Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure
title_sort Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Liyuan Song
Libin Tang
Qun Hao
Vincent Teng
Hao Lv
Jingyu Wang
Jiangmin Feng
Yan Zhou
Wenjin He
Wei Wang
format Journal article
container_title Nanotechnology
container_volume 33
container_issue 42
publishDate 2022
institution Swansea University
issn 0957-4484
1361-6528
doi_str_mv 10.1088/1361-6528/ac80cc
publisher IOP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Combining novel two-dimensional (2D) materials with traditional semiconductors to form heterostructures for photoelectric detection have attracted great attention due to their excellent photoelectric properties. In this study, we reported the formation of a heterostructure comprising of tin telluride (SnTe) and germanium (Ge) by a simple and efficient one-step magnetron sputtering technique. A photodetector was fabricated by sputtering a nanofilm of SnTe on to a pre-masked n-Ge substrate. J-V measurements obtained from the SnTe/n-Ge photodetector demonstrated diode and photovoltaic characteristics in the visible to nearinfrared band (i.e., 400-2050 nm). Under near-infrared illumination at 850 nm with an optical power density of 13.81 mW/cm2, the SnTe/n-Ge photodetector exhibited a small open-circuit voltage of 0.05 V. It also attained a high responsivity (R) and detectivity (D*) of 617.34 mA/W (at bias voltage of -0.5 V) and 2.33×1011 cmHz1/2W-1 (at zero bias), respectively. Therefore, SnTe nanofilm/n-Ge heterostructure is highly suitable for used as low-power broadband photodetector due to its excellent performances and simple device configuration.
published_date 2022-07-13T20:13:20Z
_version_ 1821347152586080256
score 11.04748

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