Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs

Seoane, Natalia; Fernandez, Julian G.; Kalna, Karol; Comesana, Enrique; Garcia-Loureiro, Antonio

doi:10.1109/led.2021.3109586

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Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs

Natalia Seoane, Julian G. Fernandez, Karol Kalna

, Enrique Comesana, Antonio Garcia-Loureiro

IEEE Electron Device Letters, Volume: 42, Issue: 10, Pages: 1416 - 1419

Swansea University Author: Karol Kalna

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DOI (Published version): 10.1109/led.2021.3109586

Abstract

Four sources of variability, metal grain granularity (MGG), line-edge roughness (LER), gate-edge roughness (GER), and random discrete dopants (RDD), affecting the performance of state-of-the-art FinFET, nanosheet (NS), and nanowire (NW) FETs, are analysed via our in-house 3D finite-element drift-dif...

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Published in:	IEEE Electron Device Letters
ISSN:	0741-3106 1558-0563
Published:	Institute of Electrical and Electronics Engineers (IEEE) 2021
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa58107
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first_indexed	2021-09-27T10:13:19Z
last_indexed	2023-01-11T14:38:28Z
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spelling	2022-10-31T19:03:34.3202388 v2 58107 2021-09-27 Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2021-09-27 EEEG Four sources of variability, metal grain granularity (MGG), line-edge roughness (LER), gate-edge roughness (GER), and random discrete dopants (RDD), affecting the performance of state-of-the-art FinFET, nanosheet (NS), and nanowire (NW) FETs, are analysed via our in-house 3D finite-element drift-diffusion/Monte Carlo simulator that includes 2D Schrödinger equation quantum corrections. The MGG and LER are the sources of variability that influence device performance of the three multi-gate architectures the most. The FinFET and the NS FET are similarly affected by the MGG variations with threshold voltage and on-current standard deviations significantly lower (at least 20 %) than those of the NW FET. The LER variability has a negligible influence in the NS FET performance with σVT values around 12 and 42 times lower than those of the FinFET and the NW FET. The three architectures are equally affected by the RDD (σVT= 8 mV) and minimally influenced by the GER (σVT ≈ 4 mV). The variability of NS FETs makes them strong candidates to replace FinFETs. Journal Article IEEE Electron Device Letters 42 10 1416 1419 Institute of Electrical and Electronics Engineers (IEEE) 0741-3106 1558-0563 1 10 2021 2021-10-01 10.1109/led.2021.3109586 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2022-10-31T19:03:34.3202388 2021-09-27T11:10:21.2920502 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Natalia Seoane 1 Julian G. Fernandez 2 Karol Kalna 0000-0002-6333-9189 3 Enrique Comesana 4 Antonio Garcia-Loureiro 5 58107__21060__c2f87dd8898f49f6b451eefae1b8a66f.pdf 58107.pdf 2021-09-30T15:29:29.6816011 Output 784260 application/pdf Accepted Manuscript true https://creativecommons.org/licenses/by-nc-nd/3.0/ true eng https://creativecommons.org/licenses/by-nc-nd/3.0/
title	Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs
spellingShingle	Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs Karol Kalna
title_short	Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs
title_full	Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs
title_fullStr	Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs
title_full_unstemmed	Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs
title_sort	Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs
author_id_str_mv	1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv	1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author	Karol Kalna
author2	Natalia Seoane Julian G. Fernandez Karol Kalna Enrique Comesana Antonio Garcia-Loureiro
format	Journal article
container_title	IEEE Electron Device Letters
container_volume	42
container_issue	10
container_start_page	1416
publishDate	2021
institution	Swansea University
issn	0741-3106 1558-0563
doi_str_mv	10.1109/led.2021.3109586
publisher	Institute of Electrical and Electronics Engineers (IEEE)
college_str	Faculty of Science and Engineering
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department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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description	Four sources of variability, metal grain granularity (MGG), line-edge roughness (LER), gate-edge roughness (GER), and random discrete dopants (RDD), affecting the performance of state-of-the-art FinFET, nanosheet (NS), and nanowire (NW) FETs, are analysed via our in-house 3D finite-element drift-diffusion/Monte Carlo simulator that includes 2D Schrödinger equation quantum corrections. The MGG and LER are the sources of variability that influence device performance of the three multi-gate architectures the most. The FinFET and the NS FET are similarly affected by the MGG variations with threshold voltage and on-current standard deviations significantly lower (at least 20 %) than those of the NW FET. The LER variability has a negligible influence in the NS FET performance with σVT values around 12 and 42 times lower than those of the FinFET and the NW FET. The three architectures are equally affected by the RDD (σVT= 8 mV) and minimally influenced by the GER (σVT ≈ 4 mV). The variability of NS FETs makes them strong candidates to replace FinFETs.
published_date	2021-10-01T04:14:22Z
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Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs

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