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Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films

Pin Tian, Hongbo Wu, Libin Tang, Jinzhong Xiang, Rongbin Ji, Shu Ping Lau, Vincent Teng Orcid Logo, Wei Guo, Yugui Yao, Lain-Jong Li

Journal of Materials Chemistry C, Volume: 39

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1039/d1tc02877d

Abstract

Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown on n-Si substrate. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ult...

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Published in: Journal of Materials Chemistry C
ISSN: 2050-7526 2050-7534
Published: Royal Society of Chemistry (RSC) 2021
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URI: https://cronfa.swan.ac.uk/Record/cronfa57904
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spelling 2021-12-02T09:12:48.9277437 v2 57904 2021-09-16 Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2021-09-16 EEEG Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown on n-Si substrate. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ultrathin film after rapid annealing at 400 ℃ for 10 min in air atmosphere. The photodetector was capable of detecting a broad wavelength from 210 nm to 2.4 μm with excellent responsivity of up to 3x105 and 2x104 AW-1, and detectivity of 4x1015 and 2x1014 Jones at deep ultraviolet (UV) and short-wave infrared (SWIR) under weak light illumination, respectively. The effectiveness of 2D materials in weak light detection was investigated by analysis of the photocurrent density contribution. Importantly, the facile growth process with low annealing temperature would allow direct large-scale integration of the 2D Bi2O2Te materials with complementary metal-oxide–semiconductor (CMOS) technology. Journal Article Journal of Materials Chemistry C 39 Royal Society of Chemistry (RSC) 2050-7526 2050-7534 28 8 2021 2021-08-28 10.1039/d1tc02877d COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2021-12-02T09:12:48.9277437 2021-09-16T09:00:52.5980482 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Pin Tian 1 Hongbo Wu 2 Libin Tang 3 Jinzhong Xiang 4 Rongbin Ji 5 Shu Ping Lau 6 Vincent Teng 0000-0003-4325-8573 7 Wei Guo 8 Yugui Yao 9 Lain-Jong Li 10 57904__20863__5e3a8dfeaa934d59a1c39215eef30a20.pdf 57904.pdf 2021-09-16T09:44:45.1085838 Output 2212096 application/pdf Accepted Manuscript true 2022-08-28T00:00:00.0000000 Released under a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND) true eng https://creativecommons.org/licenses/by-nc-nd/2.0/
title Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
spellingShingle Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
Vincent Teng
title_short Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
title_full Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
title_fullStr Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
title_full_unstemmed Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
title_sort Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Pin Tian
Hongbo Wu
Libin Tang
Jinzhong Xiang
Rongbin Ji
Shu Ping Lau
Vincent Teng
Wei Guo
Yugui Yao
Lain-Jong Li
format Journal article
container_title Journal of Materials Chemistry C
container_volume 39
publishDate 2021
institution Swansea University
issn 2050-7526
2050-7534
doi_str_mv 10.1039/d1tc02877d
publisher Royal Society of Chemistry (RSC)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown on n-Si substrate. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ultrathin film after rapid annealing at 400 ℃ for 10 min in air atmosphere. The photodetector was capable of detecting a broad wavelength from 210 nm to 2.4 μm with excellent responsivity of up to 3x105 and 2x104 AW-1, and detectivity of 4x1015 and 2x1014 Jones at deep ultraviolet (UV) and short-wave infrared (SWIR) under weak light illumination, respectively. The effectiveness of 2D materials in weak light detection was investigated by analysis of the photocurrent density contribution. Importantly, the facile growth process with low annealing temperature would allow direct large-scale integration of the 2D Bi2O2Te materials with complementary metal-oxide–semiconductor (CMOS) technology.
published_date 2021-08-28T04:13:59Z
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score 11.037056

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