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High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module

Zhongfu Zhou Orcid Logo, Petar Igic Orcid Logo

International Journal of Electronics, Volume: 97, Issue: 2, Pages: 195 - 205

Swansea University Authors: Zhongfu Zhou Orcid Logo, Petar Igic Orcid Logo

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DOI (Published version): 10.1080/00207210903478077

Abstract

In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temperature of insulated gate bipolar transistor (IGBT) devices of a three-phase inverter power module is presented. The temperature-dependent power loss characteristics of IGBT and diode devices are measur...

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Published in: International Journal of Electronics
ISSN: 1362-3060
Published: 2010
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URI: https://cronfa.swan.ac.uk/Record/cronfa5785
first_indexed 2013-07-23T11:53:44Z
last_indexed 2018-02-09T04:32:12Z
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spelling 2017-10-11T11:08:27.4786091 v2 5785 2013-01-21 High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module 614fc57cde2ee383718d4f4c462b5fba 0000-0002-0843-7253 Zhongfu Zhou Zhongfu Zhou true false e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2013-01-21 ACEM In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temperature of insulated gate bipolar transistor (IGBT) devices of a three-phase inverter power module is presented. The temperature-dependent power loss characteristics of IGBT and diode devices are measured and stored in lookup tables, which replace the conventional complicated physics-based compact models. An inverter is modelled as a voltage controlled voltage source, which allows the inverter-based power train simulation to be carried out in the continuous time domain with a large simulation time-step (1 ms). Using the simulated sinusoidal voltage and current components of the inverter output, the given pulse width modulation mode, the conduction time (duty ratio) and the current of the devices are extracted. Based on the lookup tables, on-times and conduction currents of devices, the average power loss over each simulation time-step is calculated, which is then fed into the inverter thermal model to predict the devices' temperatures. The advantage of the proposed model is that an accurate ET simulation of inverter for long real-time (many minutes) operation can be carried out within an acceptable computational time using a standard modern personal computer. Both simulation and experimental validation have been carried out, and an excellent agreement has been achieved between the simulation and experimental data. Journal Article International Journal of Electronics 97 2 195 205 1362-3060 inverter power module, electro-thermal simulation, power losses 31 12 2010 2010-12-31 10.1080/00207210903478077 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2017-10-11T11:08:27.4786091 2013-01-21T06:01:11.0000000 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Zhongfu Zhou 0000-0002-0843-7253 1 Petar Igic 0000-0001-8150-8815 2
title High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module
spellingShingle High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module
Zhongfu Zhou
Petar Igic
title_short High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module
title_full High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module
title_fullStr High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module
title_full_unstemmed High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module
title_sort High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module
author_id_str_mv 614fc57cde2ee383718d4f4c462b5fba
e085acc259a367abc89338346a150186
author_id_fullname_str_mv 614fc57cde2ee383718d4f4c462b5fba_***_Zhongfu Zhou
e085acc259a367abc89338346a150186_***_Petar Igic
author Zhongfu Zhou
Petar Igic
author2 Zhongfu Zhou
Petar Igic
format Journal article
container_title International Journal of Electronics
container_volume 97
container_issue 2
container_start_page 195
publishDate 2010
institution Swansea University
issn 1362-3060
doi_str_mv 10.1080/00207210903478077
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 0
active_str 0
description In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temperature of insulated gate bipolar transistor (IGBT) devices of a three-phase inverter power module is presented. The temperature-dependent power loss characteristics of IGBT and diode devices are measured and stored in lookup tables, which replace the conventional complicated physics-based compact models. An inverter is modelled as a voltage controlled voltage source, which allows the inverter-based power train simulation to be carried out in the continuous time domain with a large simulation time-step (1 ms). Using the simulated sinusoidal voltage and current components of the inverter output, the given pulse width modulation mode, the conduction time (duty ratio) and the current of the devices are extracted. Based on the lookup tables, on-times and conduction currents of devices, the average power loss over each simulation time-step is calculated, which is then fed into the inverter thermal model to predict the devices' temperatures. The advantage of the proposed model is that an accurate ET simulation of inverter for long real-time (many minutes) operation can be carried out within an acceptable computational time using a standard modern personal computer. Both simulation and experimental validation have been carried out, and an excellent agreement has been achieved between the simulation and experimental data.
published_date 2010-12-31T03:11:42Z
_version_ 1821373473692319744
score 11.04748

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