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Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding

M. R Jennings, A Pérez-Tomás, O. J Guy, R Hammond, S. E Burrows, P. M Gammon, M Lodzinski, J. A Covington, P. A Mawby, Owen Guy Orcid Logo

Electrochemical and Solid-State Letters, Volume: 11, Issue: 11, Pages: H306 - H308

Swansea University Author: Owen Guy Orcid Logo

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DOI (Published version): 10.1149/1.2976158

Published in: Electrochemical and Solid-State Letters
ISSN: 1099-0062
Published: 2008
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URI: https://cronfa.swan.ac.uk/Record/cronfa5658
first_indexed 2013-07-23T11:53:20Z
last_indexed 2018-02-09T04:32:19Z
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spelling 2016-08-16T11:36:21.4298714 v2 5658 2013-09-03 Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding c7fa5949b8528e048c5b978005f66794 0000-0002-6449-4033 Owen Guy Owen Guy true false 2013-09-03 EAAS Journal Article Electrochemical and Solid-State Letters 11 11 H306 H308 1099-0062 31 12 2008 2008-12-31 10.1149/1.2976158 This paper is one of 18 publications producedunder the DTI technology programme project "INTRINSiC" (Interactive Research in Silicon Carbide). This 3 year £1.1m project, running from 2006-2009, and involved six industrial and two academic partners. INTRINSIC is developing novel silicon carbide device technology.It describes important developments in silicon carbide technology - super-smooth surfaces. Using this new technology gives a 10-fold improvement in surface quality improving device performance, relative to conventional devices. This process technology is being adopted by industry and has led to further collaborative projects with Pure Wafer Ltd via the European Social Fund. COLLEGE NANME Engineering and Applied Sciences School COLLEGE CODE EAAS Swansea University 2016-08-16T11:36:21.4298714 2013-09-03T06:16:22.0000000 Faculty of Science and Engineering School of Engineering and Applied Sciences - Chemistry M. R Jennings 1 A Pérez-Tomás 2 O. J Guy 3 R Hammond 4 S. E Burrows 5 P. M Gammon 6 M Lodzinski 7 J. A Covington 8 P. A Mawby 9 Owen Guy 0000-0002-6449-4033 10
title Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding
spellingShingle Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding
Owen Guy
title_short Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding
title_full Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding
title_fullStr Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding
title_full_unstemmed Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding
title_sort Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding
author_id_str_mv c7fa5949b8528e048c5b978005f66794
author_id_fullname_str_mv c7fa5949b8528e048c5b978005f66794_***_Owen Guy
author Owen Guy
author2 M. R Jennings
A Pérez-Tomás
O. J Guy
R Hammond
S. E Burrows
P. M Gammon
M Lodzinski
J. A Covington
P. A Mawby
Owen Guy
format Journal article
container_title Electrochemical and Solid-State Letters
container_volume 11
container_issue 11
container_start_page H306
publishDate 2008
institution Swansea University
issn 1099-0062
doi_str_mv 10.1149/1.2976158
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Chemistry{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Chemistry
document_store_str 0
active_str 0
published_date 2008-12-31T12:10:32Z
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score 11.207806

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