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Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices

P. M Gammon, A Pérez-Tomás, M. R Jennings, O. J Guy, N Rimmer, J Llobet, N Mestres, P Godignon, M Placidi, M Zabala, J. A Covington, P. A Mawby, Owen Guy Orcid Logo

Applied Physics Letters, Volume: 97, Issue: 1, Start page: 013506

Swansea University Author: Owen Guy Orcid Logo

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DOI (Published version): 10.1063/1.3462932

Published in: Applied Physics Letters
ISSN: 0003-6951
Published: 2010
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URI: https://cronfa.swan.ac.uk/Record/cronfa5655
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first_indexed 2013-07-23T11:53:19Z
last_indexed 2018-02-09T04:32:19Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2016-08-16T11:36:46.1720582</datestamp><bib-version>v2</bib-version><id>5655</id><entry>2013-09-03</entry><title>Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices</title><swanseaauthors><author><sid>c7fa5949b8528e048c5b978005f66794</sid><ORCID>0000-0002-6449-4033</ORCID><firstname>Owen</firstname><surname>Guy</surname><name>Owen Guy</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>CHEM</deptcode><abstract></abstract><type>Journal Article</type><journal>Applied Physics Letters</journal><volume>97</volume><journalNumber>1</journalNumber><paginationStart>013506</paginationStart><publisher/><issnPrint>0003-6951</issnPrint><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2010</publishedYear><publishedDate>2010-12-31</publishedDate><doi>10.1063/1.3462932</doi><url/><notes>This paper is one of 18 publications produced as part of the DTI technology programme project "INTRINSiC" (Interactive Research in Silicon Carbide). This 3 year &#xA3;1.1m project, commenced ran from 2006-2009, and involved six industrial and two academic partners. INTRINSIC is developing novel silicon carbide device technology. The paper decribes the interfacial behaviour of key new dielectric materials - applied as SiC gates.</notes><college>COLLEGE NANME</college><department>Chemistry</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>CHEM</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2016-08-16T11:36:46.1720582</lastEdited><Created>2013-09-03T06:16:23.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Chemistry</level></path><authors><author><firstname>P. M</firstname><surname>Gammon</surname><order>1</order></author><author><firstname>A</firstname><surname>P&#xE9;rez-Tom&#xE1;s</surname><order>2</order></author><author><firstname>M. R</firstname><surname>Jennings</surname><order>3</order></author><author><firstname>O. J</firstname><surname>Guy</surname><order>4</order></author><author><firstname>N</firstname><surname>Rimmer</surname><order>5</order></author><author><firstname>J</firstname><surname>Llobet</surname><order>6</order></author><author><firstname>N</firstname><surname>Mestres</surname><order>7</order></author><author><firstname>P</firstname><surname>Godignon</surname><order>8</order></author><author><firstname>M</firstname><surname>Placidi</surname><order>9</order></author><author><firstname>M</firstname><surname>Zabala</surname><order>10</order></author><author><firstname>J. A</firstname><surname>Covington</surname><order>11</order></author><author><firstname>P. A</firstname><surname>Mawby</surname><order>12</order></author><author><firstname>Owen</firstname><surname>Guy</surname><orcid>0000-0002-6449-4033</orcid><order>13</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2016-08-16T11:36:46.1720582 v2 5655 2013-09-03 Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices c7fa5949b8528e048c5b978005f66794 0000-0002-6449-4033 Owen Guy Owen Guy true false 2013-09-03 CHEM Journal Article Applied Physics Letters 97 1 013506 0003-6951 31 12 2010 2010-12-31 10.1063/1.3462932 This paper is one of 18 publications produced as part of the DTI technology programme project "INTRINSiC" (Interactive Research in Silicon Carbide). This 3 year £1.1m project, commenced ran from 2006-2009, and involved six industrial and two academic partners. INTRINSIC is developing novel silicon carbide device technology. The paper decribes the interfacial behaviour of key new dielectric materials - applied as SiC gates. COLLEGE NANME Chemistry COLLEGE CODE CHEM Swansea University 2016-08-16T11:36:46.1720582 2013-09-03T06:16:23.0000000 Faculty of Science and Engineering School of Engineering and Applied Sciences - Chemistry P. M Gammon 1 A Pérez-Tomás 2 M. R Jennings 3 O. J Guy 4 N Rimmer 5 J Llobet 6 N Mestres 7 P Godignon 8 M Placidi 9 M Zabala 10 J. A Covington 11 P. A Mawby 12 Owen Guy 0000-0002-6449-4033 13
title Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
spellingShingle Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
Owen Guy
title_short Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
title_full Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
title_fullStr Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
title_full_unstemmed Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
title_sort Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
author_id_str_mv c7fa5949b8528e048c5b978005f66794
author_id_fullname_str_mv c7fa5949b8528e048c5b978005f66794_***_Owen Guy
author Owen Guy
author2 P. M Gammon
A Pérez-Tomás
M. R Jennings
O. J Guy
N Rimmer
J Llobet
N Mestres
P Godignon
M Placidi
M Zabala
J. A Covington
P. A Mawby
Owen Guy
format Journal article
container_title Applied Physics Letters
container_volume 97
container_issue 1
container_start_page 013506
publishDate 2010
institution Swansea University
issn 0003-6951
doi_str_mv 10.1063/1.3462932
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Chemistry{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Chemistry
document_store_str 0
active_str 0
published_date 2010-12-31T03:06:51Z
_version_ 1763749722644807680
score 11.037603

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