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Inducing upwards band bending by surface stripping ZnO nanowires with argon bombardment

Christopher Barnett, Jorge Navarro Torres, James McGettrick Orcid Logo, Thierry Maffeis Orcid Logo, Andrew Barron

Nanotechnology, Volume: 31, Issue: 50, Start page: 505705

Swansea University Authors: Christopher Barnett, Jorge Navarro Torres, James McGettrick Orcid Logo, Thierry Maffeis Orcid Logo, Andrew Barron

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DOI (Published version): 10.1088/1361-6528/abb5d1

Abstract

Metal oxide semiconductors such as ZnO have attracted much scientific attention due their material and electrical properties and their ability to form nanostructures that can be used in numerous devices. However, ZnO is naturally n-type and tailoring its electrical properties towards intrinsic or p-...

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Published in: Nanotechnology
ISSN: 0957-4484 1361-6528
Published: IOP Publishing 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa55514
first_indexed 2020-10-26T10:19:34Z
last_indexed 2020-12-08T04:11:00Z
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spelling 2020-12-07T15:18:50.2760880 v2 55514 2020-10-26 Inducing upwards band bending by surface stripping ZnO nanowires with argon bombardment 3cc4b7c0dcf59d3ff31f9f13b0e5a831 Christopher Barnett Christopher Barnett true false 03488f1230e69904a589e657796074ca Jorge Navarro Torres Jorge Navarro Torres true false bdbacc591e2de05180e0fd3cc13fa480 0000-0002-7719-2958 James McGettrick James McGettrick true false 992eb4cb18b61c0cd3da6e0215ac787c 0000-0003-2357-0092 Thierry Maffeis Thierry Maffeis true false 92e452f20936d688d36f91c78574241d Andrew Barron Andrew Barron true false 2020-10-26 Metal oxide semiconductors such as ZnO have attracted much scientific attention due their material and electrical properties and their ability to form nanostructures that can be used in numerous devices. However, ZnO is naturally n-type and tailoring its electrical properties towards intrinsic or p-type in order to optimise device operation have proved difficult. Here, we present an x-ray photon-electron spectroscopy and photoluminescence study of ZnO nanowires that have been treated with different argon bombardment treatments including with monoatomic beams and cluster beams of 500 atoms and 2000 atoms with acceleration volte of 0.5 keV–20 keV. We observed that argon bombardment can remove surface contamination which will improve contact resistance and consistency. We also observed that using higher intensity argon bombardment stripped the surface for nanowires causing a reduction in defects and surface OH– groups both of which are possible causes of the n-type nature and observed a shift in the valance band edge suggest a shift to a more p-type nature. These results indicate a simple method for tailoring the electrical characteristic of ZnO. Journal Article Nanotechnology 31 50 505705 IOP Publishing 0957-4484 1361-6528 11 12 2020 2020-12-11 10.1088/1361-6528/abb5d1 COLLEGE NANME COLLEGE CODE Swansea University 2020-12-07T15:18:50.2760880 2020-10-26T10:12:16.1712987 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Christopher Barnett 1 Jorge Navarro Torres 2 James McGettrick 0000-0002-7719-2958 3 Thierry Maffeis 0000-0003-2357-0092 4 Andrew Barron 5 55514__18495__fbd0b337e4f24f248fcbe6c5217a9dc7.pdf 55514.pdf 2020-10-26T10:14:51.0228120 Output 2926811 application/pdf Version of Record true © 2020 The Author(s). Released under the terms of the Creative Commons Attribution 4.0 license true eng https://creativecommons.org/licenses/by/4.0/
title Inducing upwards band bending by surface stripping ZnO nanowires with argon bombardment
spellingShingle Inducing upwards band bending by surface stripping ZnO nanowires with argon bombardment
Christopher Barnett
Jorge Navarro Torres
James McGettrick
Thierry Maffeis
Andrew Barron
title_short Inducing upwards band bending by surface stripping ZnO nanowires with argon bombardment
title_full Inducing upwards band bending by surface stripping ZnO nanowires with argon bombardment
title_fullStr Inducing upwards band bending by surface stripping ZnO nanowires with argon bombardment
title_full_unstemmed Inducing upwards band bending by surface stripping ZnO nanowires with argon bombardment
title_sort Inducing upwards band bending by surface stripping ZnO nanowires with argon bombardment
author_id_str_mv 3cc4b7c0dcf59d3ff31f9f13b0e5a831
03488f1230e69904a589e657796074ca
bdbacc591e2de05180e0fd3cc13fa480
992eb4cb18b61c0cd3da6e0215ac787c
92e452f20936d688d36f91c78574241d
author_id_fullname_str_mv 3cc4b7c0dcf59d3ff31f9f13b0e5a831_***_Christopher Barnett
03488f1230e69904a589e657796074ca_***_Jorge Navarro Torres
bdbacc591e2de05180e0fd3cc13fa480_***_James McGettrick
992eb4cb18b61c0cd3da6e0215ac787c_***_Thierry Maffeis
92e452f20936d688d36f91c78574241d_***_Andrew Barron
author Christopher Barnett
Jorge Navarro Torres
James McGettrick
Thierry Maffeis
Andrew Barron
author2 Christopher Barnett
Jorge Navarro Torres
James McGettrick
Thierry Maffeis
Andrew Barron
format Journal article
container_title Nanotechnology
container_volume 31
container_issue 50
container_start_page 505705
publishDate 2020
institution Swansea University
issn 0957-4484
1361-6528
doi_str_mv 10.1088/1361-6528/abb5d1
publisher IOP Publishing
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
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description Metal oxide semiconductors such as ZnO have attracted much scientific attention due their material and electrical properties and their ability to form nanostructures that can be used in numerous devices. However, ZnO is naturally n-type and tailoring its electrical properties towards intrinsic or p-type in order to optimise device operation have proved difficult. Here, we present an x-ray photon-electron spectroscopy and photoluminescence study of ZnO nanowires that have been treated with different argon bombardment treatments including with monoatomic beams and cluster beams of 500 atoms and 2000 atoms with acceleration volte of 0.5 keV–20 keV. We observed that argon bombardment can remove surface contamination which will improve contact resistance and consistency. We also observed that using higher intensity argon bombardment stripped the surface for nanowires causing a reduction in defects and surface OH– groups both of which are possible causes of the n-type nature and observed a shift in the valance band edge suggest a shift to a more p-type nature. These results indicate a simple method for tailoring the electrical characteristic of ZnO.
published_date 2020-12-11T07:54:22Z
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