Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Zhao, Yiqun; Tang, Libin; Yang, Shengyi; Lau, Shu Ping; Teng, Vincent

doi:10.1186/s11671-020-03336-7

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Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Yiqun Zhao, Libin Tang, Shengyi Yang, Shu Ping Lau, Vincent Teng

Nanoscale Research Letters, Volume: 15, Issue: 1

Swansea University Author: Vincent Teng

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DOI (Published version): 10.1186/s11671-020-03336-7

Abstract

GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofi...

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Published in:	Nanoscale Research Letters
ISSN:	1556-276X
Published:	Springer Science and Business Media LLC 2020
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa54083

first_indexed	2020-04-29T13:22:32Z
last_indexed	2020-07-10T13:16:48Z
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recordtype	SURis
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spelling	2020-07-10T11:41:54.6618922 v2 54083 2020-04-29 Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2020-04-29 ACEM GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated. Journal Article Nanoscale Research Letters 15 1 Springer Science and Business Media LLC 1556-276X GeTe, Heterojunction, Optoelectronic characteristics, Photovoltaic detector 29 6 2020 2020-06-29 10.1186/s11671-020-03336-7 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2020-07-10T11:41:54.6618922 2020-04-29T11:35:02.7417594 Yiqun Zhao 1 Libin Tang 2 Shengyi Yang 3 Shu Ping Lau 4 Vincent Teng 0000-0003-4325-8573 5 54083__17665__96763133dfac48eab1f856d1e13a1beb.pdf 54083.pdf 2020-07-07T12:04:48.1143665 Output 1552886 application/pdf Version of Record true Released under the terms of a Creative Commons Attribution 4.0 International License (CC-BY). true eng http://creativecommons.org/licenses/by/4.0/
title	Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
spellingShingle	Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction Vincent Teng
title_short	Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_full	Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_fullStr	Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_full_unstemmed	Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
title_sort	Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
author_id_str_mv	98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv	98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author	Vincent Teng
author2	Yiqun Zhao Libin Tang Shengyi Yang Shu Ping Lau Vincent Teng
format	Journal article
container_title	Nanoscale Research Letters
container_volume	15
container_issue	1
publishDate	2020
institution	Swansea University
issn	1556-276X
doi_str_mv	10.1186/s11671-020-03336-7
publisher	Springer Science and Business Media LLC
document_store_str	1
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description	GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.
published_date	2020-06-29T19:53:37Z
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score	11.04748

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

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