Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment

Monir, Shafiul; Kartopu, Giray; Barrioz, Vincent; Lamb, Dan; Irvine, Stuart; Yang, Xiaogang; Vagapov, Yuriy

doi:10.3390/app10051734

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Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment

Shafiul Monir, Giray Kartopu, Vincent Barrioz, Dan Lamb

, Stuart Irvine

, Xiaogang Yang, Yuriy Vagapov

Applied Sciences, Volume: 10, Issue: 5, Start page: 1734

Swansea University Authors: Giray Kartopu, Dan Lamb , Stuart Irvine

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DOI (Published version): 10.3390/app10051734

Abstract

The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and diisopropyltelluride were used as the reactants,...

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Published in:	Applied Sciences
ISSN:	2076-3417
Published:	MDPI AG 2020
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URI:	https://cronfa.swan.ac.uk/Record/cronfa53874
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last_indexed	2020-10-24T03:06:22Z
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spelling	2020-10-23T10:32:33.9458949 v2 53874 2020-03-27 Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment 5c4917e0a29801844ec31737672f930c Giray Kartopu Giray Kartopu true false decd92a653848a357f0c6f8e38e0aea0 0000-0002-4762-4641 Dan Lamb Dan Lamb true false 1ddb966eccef99aa96e87f1ea4917f1f 0000-0002-1652-4496 Stuart Irvine Stuart Irvine true false 2020-03-27 MTLS The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and diisopropyltelluride were used as the reactants, released from a recently developed coating head orientated above the glass substrate (of area 15 × 15 cm2). Depositions were performed in static mode and dynamic mode (i.e., over a moving substrate). The deposited CdTe film weights were compared against the calculated theoretical value of the molar supply of the precursors, in order to estimate material utilisation. The numerical simulation gave insight into the effect that the exhaust’s restricted flow orifice configuration had on the deposition uniformity observed in the static experiments. It was shown that > 59% of material utilisation could be achieved under favourable deposition conditions. The activation energy determined from the Arrhenius plot of growth rate was ~ 60 kJ/mol and was in good agreement with previously reported CdTe growth using metalorganic chemical vapour deposition (MOCVD). Process requirements for using a chamberless environment for the inline deposition of compound semiconductor layers were presented. Journal Article Applied Sciences 10 5 1734 MDPI AG 2076-3417 CFD modelling; chamberless inline process (CIP); MOCVD; cadmium telluride 3 3 2020 2020-03-03 10.3390/app10051734 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2020-10-23T10:32:33.9458949 2020-03-27T09:53:32.7557051 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Shafiul Monir 1 Giray Kartopu 2 Vincent Barrioz 3 Dan Lamb 0000-0002-4762-4641 4 Stuart Irvine 0000-0002-1652-4496 5 Xiaogang Yang 6 Yuriy Vagapov 7 53874__16944__53a7beb0aa854cc982599c661d19db3b.pdf 53874.pdf 2020-03-27T09:55:02.7424128 Output 4113697 application/pdf Version of Record true Released under the terms of a Creative Commons Attribution License (CC-BY). true eng https://creativecommons.org/licenses/by/4.0/
title	Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
spellingShingle	Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment Giray Kartopu Dan Lamb Stuart Irvine
title_short	Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
title_full	Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
title_fullStr	Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
title_full_unstemmed	Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
title_sort	Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment
author_id_str_mv	5c4917e0a29801844ec31737672f930c decd92a653848a357f0c6f8e38e0aea0 1ddb966eccef99aa96e87f1ea4917f1f
author_id_fullname_str_mv	5c4917e0a29801844ec31737672f930c_*_Giray Kartopu decd92a653848a357f0c6f8e38e0aea0__Dan Lamb 1ddb966eccef99aa96e87f1ea4917f1f_**_Stuart Irvine
author	Giray Kartopu Dan Lamb Stuart Irvine
author2	Shafiul Monir Giray Kartopu Vincent Barrioz Dan Lamb Stuart Irvine Xiaogang Yang Yuriy Vagapov
format	Journal article
container_title	Applied Sciences
container_volume	10
container_issue	5
container_start_page	1734
publishDate	2020
institution	Swansea University
issn	2076-3417
doi_str_mv	10.3390/app10051734
publisher	MDPI AG
college_str	Faculty of Science and Engineering
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department_str	School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
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description	The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and diisopropyltelluride were used as the reactants, released from a recently developed coating head orientated above the glass substrate (of area 15 × 15 cm2). Depositions were performed in static mode and dynamic mode (i.e., over a moving substrate). The deposited CdTe film weights were compared against the calculated theoretical value of the molar supply of the precursors, in order to estimate material utilisation. The numerical simulation gave insight into the effect that the exhaust’s restricted flow orifice configuration had on the deposition uniformity observed in the static experiments. It was shown that > 59% of material utilisation could be achieved under favourable deposition conditions. The activation energy determined from the Arrhenius plot of growth rate was ~ 60 kJ/mol and was in good agreement with previously reported CdTe growth using metalorganic chemical vapour deposition (MOCVD). Process requirements for using a chamberless environment for the inline deposition of compound semiconductor layers were presented.
published_date	2020-03-03T04:07:04Z
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Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment

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