High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

Jia, Menghan; Wang, Fang; Tang, Libin; Xiang, Jinzhong; Teng, Vincent; Lau, Shu Ping

doi:10.1186/s11671-020-3271-9

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High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

Menghan Jia, Fang Wang, Libin Tang, Jinzhong Xiang, Vincent Teng

, Shu Ping Lau

Nanoscale Research Letters, Volume: 15, Issue: 1

Swansea University Author: Vincent Teng

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DOI (Published version): 10.1186/s11671-020-3271-9

Abstract

Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electro...

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Published in:	Nanoscale Research Letters
ISSN:	1931-7573 1556-276X
Published:	Springer Science and Business Media LLC 2020
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa53742

first_indexed	2020-03-05T13:32:01Z
last_indexed	2020-10-24T03:06:11Z
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fullrecord	<?xml version="1.0"?><rfc1807><datestamp>2020-10-23T11:28:29.1649754</datestamp><bib-version>v2</bib-version><id>53742</id><entry>2020-03-05</entry><title>High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction</title><swanseaauthors><author><sid>98f529f56798da1ba3e6e93d2817c114</sid><ORCID>0000-0003-4325-8573</ORCID><firstname>Vincent</firstname><surname>Teng</surname><name>Vincent Teng</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2020-03-05</date><deptcode>ACEM</deptcode><abstract>Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2¯¯¯ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction.</abstract><type>Journal Article</type><journal>Nanoscale Research Letters</journal><volume>15</volume><journalNumber>1</journalNumber><publisher>Springer Science and Business Media LLC</publisher><issnPrint>1931-7573</issnPrint><issnElectronic>1556-276X</issnElectronic><keywords>β-Ga2O3; NiO; Heterojunction; UV photodetector</keywords><publishedDay>1</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2020</publishedYear><publishedDate>2020-12-01</publishedDate><doi>10.1186/s11671-020-3271-9</doi><url/><notes/><college>COLLEGE NANME</college><department>Aerospace, Civil, Electrical, and Mechanical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>ACEM</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2020-10-23T11:28:29.1649754</lastEdited><Created>2020-03-05T09:35:11.2902481</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Menghan</firstname><surname>Jia</surname><order>1</order></author><author><firstname>Fang</firstname><surname>Wang</surname><order>2</order></author><author><firstname>Libin</firstname><surname>Tang</surname><order>3</order></author><author><firstname>Jinzhong</firstname><surname>Xiang</surname><order>4</order></author><author><firstname>Vincent</firstname><surname>Teng</surname><orcid>0000-0003-4325-8573</orcid><order>5</order></author><author><firstname>Shu Ping</firstname><surname>Lau</surname><order>6</order></author></authors><documents><document><filename>53742__16775__93d20d9de746467c9155bfe6437c8f34.pdf</filename><originalFilename>jia2020.pdf</originalFilename><uploaded>2020-03-05T09:43:52.1409255</uploaded><type>Output</type><contentLength>2452586</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><documentNotes>Released under the terms of a Creative Commons Attribution 4.0 International License (CC-BY).</documentNotes><copyrightCorrect>true</copyrightCorrect><language>eng</language><licence>http://creativecommons.org/licenses/by/4.0/</licence></document></documents><OutputDurs/></rfc1807>
spelling	2020-10-23T11:28:29.1649754 v2 53742 2020-03-05 High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2020-03-05 ACEM Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2¯¯¯ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction. Journal Article Nanoscale Research Letters 15 1 Springer Science and Business Media LLC 1931-7573 1556-276X β-Ga2O3; NiO; Heterojunction; UV photodetector 1 12 2020 2020-12-01 10.1186/s11671-020-3271-9 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2020-10-23T11:28:29.1649754 2020-03-05T09:35:11.2902481 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Menghan Jia 1 Fang Wang 2 Libin Tang 3 Jinzhong Xiang 4 Vincent Teng 0000-0003-4325-8573 5 Shu Ping Lau 6 53742__16775__93d20d9de746467c9155bfe6437c8f34.pdf jia2020.pdf 2020-03-05T09:43:52.1409255 Output 2452586 application/pdf Version of Record true Released under the terms of a Creative Commons Attribution 4.0 International License (CC-BY). true eng http://creativecommons.org/licenses/by/4.0/
title	High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
spellingShingle	High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction Vincent Teng
title_short	High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
title_full	High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
title_fullStr	High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
title_full_unstemmed	High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
title_sort	High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
author_id_str_mv	98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv	98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author	Vincent Teng
author2	Menghan Jia Fang Wang Libin Tang Jinzhong Xiang Vincent Teng Shu Ping Lau
format	Journal article
container_title	Nanoscale Research Letters
container_volume	15
container_issue	1
publishDate	2020
institution	Swansea University
issn	1931-7573 1556-276X
doi_str_mv	10.1186/s11671-020-3271-9
publisher	Springer Science and Business Media LLC
college_str	Faculty of Science and Engineering
hierarchytype
hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str	1
active_str	0
description	Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2¯¯¯ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction.
published_date	2020-12-01T13:56:00Z
_version_	1821323412567490560
score	11.048042

High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

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