Journal article 1219 views
p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching
Journal of Materials Chemistry A, Volume: 7, Issue: 32, Pages: 18971 - 18979
Swansea University Author:
James Durrant
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1039/C9TA03896E
Abstract
Doping is a widely implemented strategy for enhancing the inherent electronic properties of charge transport layers in photovoltaic (PV) devices. Here, in direct contrast to existing understanding, we find that a reduction in p-doping of the organic hole transport layer (HTL) leads to substantial im...
Published in: | Journal of Materials Chemistry A |
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ISSN: | 2050-7488 2050-7496 |
Published: |
2019
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URI: | https://cronfa.swan.ac.uk/Record/cronfa51619 |
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2019-08-29T14:53:23Z |
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last_indexed |
2019-10-11T14:23:24Z |
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2019-10-11T12:13:06.5553247 v2 51619 2019-08-29 p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching f3dd64bc260e5c07adfa916c27dbd58a 0000-0001-8353-7345 James Durrant James Durrant true false 2019-08-29 EAAS Doping is a widely implemented strategy for enhancing the inherent electronic properties of charge transport layers in photovoltaic (PV) devices. Here, in direct contrast to existing understanding, we find that a reduction in p-doping of the organic hole transport layer (HTL) leads to substantial improvements in PV performance in planar p–i–n perovskite solar cells (PSCs), driven by improvements in open circuit voltage (VOC). Employing a range of transient and steady state characterisation tools, we find that the improvements of VOC correlate with reduced surface recombination losses in less p-doped HTLs. A simple device model including screening of bulk electric fields in the perovskite layer is used to explain this observation. In particular, photoluminescence (PL) emission of complete solar cells shows that efficient performance is correlated to a high PL intensity at open circuit and a low PL intensity at short circuit. We conclude that desirable transport layers for p–i–n PSCs should be charge selective contacts with low doping densities. Journal Article Journal of Materials Chemistry A 7 32 18971 18979 2050-7488 2050-7496 31 12 2019 2019-12-31 10.1039/C9TA03896E COLLEGE NANME Engineering and Applied Sciences School COLLEGE CODE EAAS Swansea University 2019-10-11T12:13:06.5553247 2019-08-29T10:11:55.6029973 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Tian Du 1 Weidong Xu 2 Matyas Daboczi 3 Jinhyun Kim 4 Shengda Xu 5 Chieh-Ting Lin 6 Hongkyu Kang 7 Kwanghee Lee 8 Martin J. Heeney 9 Ji-Seon Kim 10 James Durrant 0000-0001-8353-7345 11 Martyn A. McLachlan 12 |
title |
p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching |
spellingShingle |
p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching James Durrant |
title_short |
p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching |
title_full |
p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching |
title_fullStr |
p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching |
title_full_unstemmed |
p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching |
title_sort |
p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching |
author_id_str_mv |
f3dd64bc260e5c07adfa916c27dbd58a |
author_id_fullname_str_mv |
f3dd64bc260e5c07adfa916c27dbd58a_***_James Durrant |
author |
James Durrant |
author2 |
Tian Du Weidong Xu Matyas Daboczi Jinhyun Kim Shengda Xu Chieh-Ting Lin Hongkyu Kang Kwanghee Lee Martin J. Heeney Ji-Seon Kim James Durrant Martyn A. McLachlan |
format |
Journal article |
container_title |
Journal of Materials Chemistry A |
container_volume |
7 |
container_issue |
32 |
container_start_page |
18971 |
publishDate |
2019 |
institution |
Swansea University |
issn |
2050-7488 2050-7496 |
doi_str_mv |
10.1039/C9TA03896E |
college_str |
Faculty of Science and Engineering |
hierarchytype |
|
hierarchy_top_id |
facultyofscienceandengineering |
hierarchy_top_title |
Faculty of Science and Engineering |
hierarchy_parent_id |
facultyofscienceandengineering |
hierarchy_parent_title |
Faculty of Science and Engineering |
department_str |
School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering |
document_store_str |
0 |
active_str |
0 |
description |
Doping is a widely implemented strategy for enhancing the inherent electronic properties of charge transport layers in photovoltaic (PV) devices. Here, in direct contrast to existing understanding, we find that a reduction in p-doping of the organic hole transport layer (HTL) leads to substantial improvements in PV performance in planar p–i–n perovskite solar cells (PSCs), driven by improvements in open circuit voltage (VOC). Employing a range of transient and steady state characterisation tools, we find that the improvements of VOC correlate with reduced surface recombination losses in less p-doped HTLs. A simple device model including screening of bulk electric fields in the perovskite layer is used to explain this observation. In particular, photoluminescence (PL) emission of complete solar cells shows that efficient performance is correlated to a high PL intensity at open circuit and a low PL intensity at short circuit. We conclude that desirable transport layers for p–i–n PSCs should be charge selective contacts with low doping densities. |
published_date |
2019-12-31T07:39:05Z |
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1824379996475490304 |
score |
11.052532 |