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Electrochemical Formation of p-Type Bi0.5Sb1.5Te3Thick Films onto Nickel
Journal of The Electrochemical Society, Volume: 164, Issue: 4, Pages: D192 - D195
Swansea University Author: Matthew Burton
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DOI (Published version): 10.1149/2.1151704jes
Abstract
Bismuth-telluride-based alloys are currently the best commercially available thermoelectric materials for applications at room temperatures. Up to 150 micron thick layers of bismuth antimony telluride (Bi0.5Sb1.5Te3) were directly deposited onto nickel by either potenstiostatic or potentiodynamic el...
Published in: | Journal of The Electrochemical Society |
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ISSN: | 0013-4651 1945-7111 |
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2017
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URI: | https://cronfa.swan.ac.uk/Record/cronfa50239 |
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2019-07-18T14:49:25.1773700 v2 50239 2019-05-07 Electrochemical Formation of p-Type Bi0.5Sb1.5Te3Thick Films onto Nickel 2deade2806e39b1f749e9cf67ac640b2 0000-0002-0376-6322 Matthew Burton Matthew Burton true false 2019-05-07 EAAS Bismuth-telluride-based alloys are currently the best commercially available thermoelectric materials for applications at room temperatures. Up to 150 micron thick layers of bismuth antimony telluride (Bi0.5Sb1.5Te3) were directly deposited onto nickel by either potenstiostatic or potentiodynamic electrodeposition. Cyclic voltammetry was employed to identify the optimal deposition potential. The films were characterized by scanning electron microscopy, energy dispersive X-rays and X-ray diffraction. The p-type films were found to be well adherent, uniform and stoichiometric with a high power factor of 2.3 × 10−4 W m−1 K−2 at film growth rates of up to 40 μm h−1. Journal Article Journal of The Electrochemical Society 164 4 D192 D195 0013-4651 1945-7111 bismuth antimony telluride, electrodeposition, nickel, p-type, thermoelectrics, thick films 31 12 2017 2017-12-31 10.1149/2.1151704jes COLLEGE NANME Engineering and Applied Sciences School COLLEGE CODE EAAS Swansea University 2019-07-18T14:49:25.1773700 2019-05-07T09:57:01.9794580 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering C. Lei 1 M. Burton 2 Iris S. Nandhakumar 3 Matthew Burton 0000-0002-0376-6322 4 0050239-13052019105148.pdf lei2017.pdf 2019-05-13T10:51:48.8700000 Output 2480738 application/pdf Version of Record true 2019-05-13T00:00:00.0000000 Distributed under the terms of a Creative Commons Attribution (CC-BY-4.0) true eng |
title |
Electrochemical Formation of p-Type Bi0.5Sb1.5Te3Thick Films onto Nickel |
spellingShingle |
Electrochemical Formation of p-Type Bi0.5Sb1.5Te3Thick Films onto Nickel Matthew Burton |
title_short |
Electrochemical Formation of p-Type Bi0.5Sb1.5Te3Thick Films onto Nickel |
title_full |
Electrochemical Formation of p-Type Bi0.5Sb1.5Te3Thick Films onto Nickel |
title_fullStr |
Electrochemical Formation of p-Type Bi0.5Sb1.5Te3Thick Films onto Nickel |
title_full_unstemmed |
Electrochemical Formation of p-Type Bi0.5Sb1.5Te3Thick Films onto Nickel |
title_sort |
Electrochemical Formation of p-Type Bi0.5Sb1.5Te3Thick Films onto Nickel |
author_id_str_mv |
2deade2806e39b1f749e9cf67ac640b2 |
author_id_fullname_str_mv |
2deade2806e39b1f749e9cf67ac640b2_***_Matthew Burton |
author |
Matthew Burton |
author2 |
C. Lei M. Burton Iris S. Nandhakumar Matthew Burton |
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Journal article |
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Journal of The Electrochemical Society |
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164 |
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4 |
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D192 |
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2017 |
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Swansea University |
issn |
0013-4651 1945-7111 |
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10.1149/2.1151704jes |
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Faculty of Science and Engineering |
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School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering |
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description |
Bismuth-telluride-based alloys are currently the best commercially available thermoelectric materials for applications at room temperatures. Up to 150 micron thick layers of bismuth antimony telluride (Bi0.5Sb1.5Te3) were directly deposited onto nickel by either potenstiostatic or potentiodynamic electrodeposition. Cyclic voltammetry was employed to identify the optimal deposition potential. The films were characterized by scanning electron microscopy, energy dispersive X-rays and X-ray diffraction. The p-type films were found to be well adherent, uniform and stoichiometric with a high power factor of 2.3 × 10−4 W m−1 K−2 at film growth rates of up to 40 μm h−1. |
published_date |
2017-12-31T01:57:59Z |
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1821368835996909568 |
score |
11.04748 |