Journal article 1018 views 473 downloads
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
Ekaterine Chikoidze,
Adel Fellous,
Amador Perez-Tomas,
Guillaume Sauthier,
Tamar Tchelidze,
Cuong Ton-That,
Tung Thanh Huynh,
Matthew Phillips,
Stephen Russell,
Mike Jennings ,
Bruno Berini,
Francois Jomard,
Yves Dumont
Materials Today Physics, Volume: 3, Pages: 118 - 126
Swansea University Author: Mike Jennings
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DOI (Published version): 10.1016/j.mtphys.2017.10.002
Abstract
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent wi...
Published in: | Materials Today Physics |
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ISSN: | 2542-5293 |
Published: |
2017
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Online Access: |
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URI: | https://cronfa.swan.ac.uk/Record/cronfa49904 |
Abstract: |
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga2O3 (crystal) – O2 (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga2O3 of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices. |
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Keywords: |
Wide band gap semiconductor; Beta-Ga2O3; Electrical properties; Hole conductivity; Thermodynamic calculations |
College: |
Faculty of Science and Engineering |
Start Page: |
118 |
End Page: |
126 |