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Data on dopant characteristics and band alignment of CdTe cells with and without a ZnO highly-resistive-transparent buffer layer

G. Kartopu, B.L. Williams, V. Zardetto, A.K. Gürlek, A.J. Clayton, S. Jones, W.M.M. Kessels, M. Creatore, S.J.C. Irvine, Giray Kartopu, Stuart Irvine Orcid Logo, Andrew Clayton Orcid Logo

Data in Brief, Volume: 22, Pages: 218 - 221

Swansea University Authors: Giray Kartopu, Stuart Irvine Orcid Logo, Andrew Clayton Orcid Logo

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DOI (Published version): 10.1016/j.dib.2018.12.002

Abstract

Photovoltaic enhancement of cadmium telluride (CdTe) thin film solar cells using a 50 nm thick, atomic-layer-deposited zinc oxide (ZnO) buffer film was reported in “Enhancement of the photocurrent and efficiency of CdTe solar cells suppressing the front contact reflection using a highly-resistive Zn...

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Published in: Data in Brief
ISSN: 2352-3409
Published: 2019
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URI: https://cronfa.swan.ac.uk/Record/cronfa48072
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spelling 2019-02-18T12:34:56.3156905 v2 48072 2019-01-08 Data on dopant characteristics and band alignment of CdTe cells with and without a ZnO highly-resistive-transparent buffer layer 5c4917e0a29801844ec31737672f930c Giray Kartopu Giray Kartopu true false 1ddb966eccef99aa96e87f1ea4917f1f 0000-0002-1652-4496 Stuart Irvine Stuart Irvine true false cdef4ab8032ae2213a97638baac8176f 0000-0002-1540-0440 Andrew Clayton Andrew Clayton true false 2019-01-08 MTLS Photovoltaic enhancement of cadmium telluride (CdTe) thin film solar cells using a 50 nm thick, atomic-layer-deposited zinc oxide (ZnO) buffer film was reported in “Enhancement of the photocurrent and efficiency of CdTe solar cells suppressing the front contact reflection using a highly-resistive ZnO buffer layer” (Kartopu et al., 2019) [1].Data presented here are the dopant profiles of two solar cells prepared side-by-side, one with and one without the ZnO highly resistive transparent (HRT) buffer, which displayed an open-circuit potential (Voc) difference of 25 mV (in favor of the no-buffer device), as well as their simulated device data. The concentration of absorber dopant atoms (arsenic) was measured using the secondary ion mass spectroscopy (SIMS) method, while the density of active dopants was calculated from the capacitance-voltage (CV) measurements. The solar cell simulation data was obtained using the SCAPS software, a one-dimensional solar cell simulation programme. The presented data indicates a small loss (around 20 mV) of Voc for the HRT buffered cells. Journal Article Data in Brief 22 218 221 2352-3409 28 2 2019 2019-02-28 10.1016/j.dib.2018.12.002 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2019-02-18T12:34:56.3156905 2019-01-08T10:03:29.5728732 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering G. Kartopu 1 B.L. Williams 2 V. Zardetto 3 A.K. Gürlek 4 A.J. Clayton 5 S. Jones 6 W.M.M. Kessels 7 M. Creatore 8 S.J.C. Irvine 9 Giray Kartopu 10 Stuart Irvine 0000-0002-1652-4496 11 Andrew Clayton 0000-0002-1540-0440 12 0048072-08012019100647.pdf kartopu2018v8.pdf 2019-01-08T10:06:47.3830000 Output 962384 application/pdf Version of Record true 2019-01-08T00:00:00.0000000 true eng
title Data on dopant characteristics and band alignment of CdTe cells with and without a ZnO highly-resistive-transparent buffer layer
spellingShingle Data on dopant characteristics and band alignment of CdTe cells with and without a ZnO highly-resistive-transparent buffer layer
Giray Kartopu
Stuart Irvine
Andrew Clayton
title_short Data on dopant characteristics and band alignment of CdTe cells with and without a ZnO highly-resistive-transparent buffer layer
title_full Data on dopant characteristics and band alignment of CdTe cells with and without a ZnO highly-resistive-transparent buffer layer
title_fullStr Data on dopant characteristics and band alignment of CdTe cells with and without a ZnO highly-resistive-transparent buffer layer
title_full_unstemmed Data on dopant characteristics and band alignment of CdTe cells with and without a ZnO highly-resistive-transparent buffer layer
title_sort Data on dopant characteristics and band alignment of CdTe cells with and without a ZnO highly-resistive-transparent buffer layer
author_id_str_mv 5c4917e0a29801844ec31737672f930c
1ddb966eccef99aa96e87f1ea4917f1f
cdef4ab8032ae2213a97638baac8176f
author_id_fullname_str_mv 5c4917e0a29801844ec31737672f930c_***_Giray Kartopu
1ddb966eccef99aa96e87f1ea4917f1f_***_Stuart Irvine
cdef4ab8032ae2213a97638baac8176f_***_Andrew Clayton
author Giray Kartopu
Stuart Irvine
Andrew Clayton
author2 G. Kartopu
B.L. Williams
V. Zardetto
A.K. Gürlek
A.J. Clayton
S. Jones
W.M.M. Kessels
M. Creatore
S.J.C. Irvine
Giray Kartopu
Stuart Irvine
Andrew Clayton
format Journal article
container_title Data in Brief
container_volume 22
container_start_page 218
publishDate 2019
institution Swansea University
issn 2352-3409
doi_str_mv 10.1016/j.dib.2018.12.002
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str 1
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description Photovoltaic enhancement of cadmium telluride (CdTe) thin film solar cells using a 50 nm thick, atomic-layer-deposited zinc oxide (ZnO) buffer film was reported in “Enhancement of the photocurrent and efficiency of CdTe solar cells suppressing the front contact reflection using a highly-resistive ZnO buffer layer” (Kartopu et al., 2019) [1].Data presented here are the dopant profiles of two solar cells prepared side-by-side, one with and one without the ZnO highly resistive transparent (HRT) buffer, which displayed an open-circuit potential (Voc) difference of 25 mV (in favor of the no-buffer device), as well as their simulated device data. The concentration of absorber dopant atoms (arsenic) was measured using the secondary ion mass spectroscopy (SIMS) method, while the density of active dopants was calculated from the capacitance-voltage (CV) measurements. The solar cell simulation data was obtained using the SCAPS software, a one-dimensional solar cell simulation programme. The presented data indicates a small loss (around 20 mV) of Voc for the HRT buffered cells.
published_date 2019-02-28T03:58:22Z
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