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One-step growth of thin film SnS with large grains using MOCVD

Andrew Clayton, Cecile Charbonneau, Wing C. Tsoi, Peter J. Siderfin, Stuart Irvine, Wing Chung Tsoi Orcid Logo

Science and Technology of Advanced Materials, Volume: 19, Issue: 1, Pages: 153 - 159

Swansea University Authors: Andrew Clayton, Cecile Charbonneau, Stuart Irvine, Wing Chung Tsoi Orcid Logo

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DOI (Published version): 10.1080/14686996.2018.1428478

Abstract

Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin –doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with po...

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Published in: Science and Technology of Advanced Materials
ISSN: 1468-6996 1878-5514
Published: Taylor and Francis 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa38099
first_indexed 2018-01-15T19:25:48Z
last_indexed 2018-03-29T19:32:55Z
id cronfa38099
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spelling 2018-03-29T13:59:26.6180770 v2 38099 2018-01-15 One-step growth of thin film SnS with large grains using MOCVD cdef4ab8032ae2213a97638baac8176f Andrew Clayton Andrew Clayton true false 4dc059714847cb22ed922ab058950560 Cecile Charbonneau Cecile Charbonneau true false 1ddb966eccef99aa96e87f1ea4917f1f Stuart Irvine Stuart Irvine true false 7e5f541df6635a9a8e1a579ff2de5d56 0000-0003-3836-5139 Wing Chung Tsoi Wing Chung Tsoi true false 2018-01-15 Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin –doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with potential use of its transparency for bifacial illumination. Tetraethyltin and ditertiarybutylsulphide were used as precursors with process temperatures 430 -470°C to promote film growth with large grains. The film stoichiometry was controlled by varying the precursor partial pressure ratios and characterised with energy dispersive X-ray spectroscopy to optimise the SnS composition. X-ray diffraction and Raman spectroscopy were used to determine the phases that were present in the film and revealed that small amounts of ottemannite Sn2S3 was present when SnS was deposited on to the ITO using optimised growth parameters. Interaction at the SnS/ITO interface to form Sn2S3 was deduced to have resulted for all growth conditions. Journal Article Science and Technology of Advanced Materials 19 1 153 159 Taylor and Francis 1468-6996 1878-5514 Thin film SnS, photovoltaics, metal organic chemical vapour deposition 31 12 2018 2018-12-31 10.1080/14686996.2018.1428478 https://zenodo.org/record/1043466#.WrzjC8nTW70 Supplementary data available via 10.5281/zenodo.1043466 COLLEGE NANME COLLEGE CODE Swansea University 2018-03-29T13:59:26.6180770 2018-01-15T09:19:55.5667469 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Andrew Clayton 1 Cecile Charbonneau 2 Wing C. Tsoi 3 Peter J. Siderfin 4 Stuart Irvine 5 Wing Chung Tsoi 0000-0003-3836-5139 6 0038099-06032018161441.pdf ClaytonOneStep2018.pdf 2018-03-06T16:14:41.8470000 Output 1459159 application/pdf Version of Record true 2018-03-06T00:00:00.0000000 true eng
title One-step growth of thin film SnS with large grains using MOCVD
spellingShingle One-step growth of thin film SnS with large grains using MOCVD
Andrew Clayton
Cecile Charbonneau
Stuart Irvine
Wing Chung Tsoi
title_short One-step growth of thin film SnS with large grains using MOCVD
title_full One-step growth of thin film SnS with large grains using MOCVD
title_fullStr One-step growth of thin film SnS with large grains using MOCVD
title_full_unstemmed One-step growth of thin film SnS with large grains using MOCVD
title_sort One-step growth of thin film SnS with large grains using MOCVD
author_id_str_mv cdef4ab8032ae2213a97638baac8176f
4dc059714847cb22ed922ab058950560
1ddb966eccef99aa96e87f1ea4917f1f
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author_id_fullname_str_mv cdef4ab8032ae2213a97638baac8176f_***_Andrew Clayton
4dc059714847cb22ed922ab058950560_***_Cecile Charbonneau
1ddb966eccef99aa96e87f1ea4917f1f_***_Stuart Irvine
7e5f541df6635a9a8e1a579ff2de5d56_***_Wing Chung Tsoi
author Andrew Clayton
Cecile Charbonneau
Stuart Irvine
Wing Chung Tsoi
author2 Andrew Clayton
Cecile Charbonneau
Wing C. Tsoi
Peter J. Siderfin
Stuart Irvine
Wing Chung Tsoi
format Journal article
container_title Science and Technology of Advanced Materials
container_volume 19
container_issue 1
container_start_page 153
publishDate 2018
institution Swansea University
issn 1468-6996
1878-5514
doi_str_mv 10.1080/14686996.2018.1428478
publisher Taylor and Francis
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
url https://zenodo.org/record/1043466#.WrzjC8nTW70
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description Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin –doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with potential use of its transparency for bifacial illumination. Tetraethyltin and ditertiarybutylsulphide were used as precursors with process temperatures 430 -470°C to promote film growth with large grains. The film stoichiometry was controlled by varying the precursor partial pressure ratios and characterised with energy dispersive X-ray spectroscopy to optimise the SnS composition. X-ray diffraction and Raman spectroscopy were used to determine the phases that were present in the film and revealed that small amounts of ottemannite Sn2S3 was present when SnS was deposited on to the ITO using optimised growth parameters. Interaction at the SnS/ITO interface to form Sn2S3 was deduced to have resulted for all growth conditions.
published_date 2018-12-31T19:28:08Z
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