No Cover Image

Journal article 1604 views 280 downloads

Surface-initiated growth of copper using isonicotinic acid-functionalized aluminum oxide surfaces

Cathren Gowenlock Orcid Logo, Virginia Gomez Orcid Logo, James McGettrick Orcid Logo, Enrico Andreoli Orcid Logo, Andrew Barron Orcid Logo

Journal of Coatings Technology and Research, Volume: 14, Issue: 1, Pages: 195 - 205

Swansea University Authors: Cathren Gowenlock Orcid Logo, Virginia Gomez Orcid Logo, James McGettrick Orcid Logo, Enrico Andreoli Orcid Logo, Andrew Barron Orcid Logo

Abstract

Isonicotinate self-assembled monolayers (SAM) were prepared on alumina surfaces (A) using isonicotinic acid (iNA). These functionalized layers (iNA-A) were used for the seeded growth of copper films (Cu-iNA-A) by hydrazine hydrate-initiated electroless deposition. The films were characterized by sca...

Full description

Published in: Journal of Coatings Technology and Research
ISSN: 1547-0091 1935-3804
Published: 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa30991
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract: Isonicotinate self-assembled monolayers (SAM) were prepared on alumina surfaces (A) using isonicotinic acid (iNA). These functionalized layers (iNA-A) were used for the seeded growth of copper films (Cu-iNA-A) by hydrazine hydrate-initiated electroless deposition. The films were characterized by scanning electron microscopy (SEM), electron-dispersive X-ray spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and advancing contact angle measurements. The films are Cu0 but with surface oxidation, and show a faceted morphology, which is more textured (Rq = 460 ± 90 nm) compared to the SAM (Rq = 2.8 ± 0.5 nm). In contrast, growth of copper films by SnCl2/PdCl2 catalyzed electroless deposition, using formaldehyde (CH2O) as the reducing agent, shows a nodular morphology on top of a relatively smooth surface. No copper films are observed in the absence of the isonicotinate SAM. The binding of Cu2+ to the iNA is proposed to facilitate reduction to Cu0 and create the seed for subsequent growth. The films show good adhesion to the functionalized surface.
College: Faculty of Science and Engineering
Issue: 1
Start Page: 195
End Page: 205