Journal article 1620 views 385 downloads
Scaling/LER Study of Si GAA Nanowire FET using 3D Finite Element Monte Carlo Simulations
Muhammad A. Elmessary,
Daniel Nagy,
Manuel Aldegunde,
Natalia Seoane,
Guillermo Indalecio,
Jari Lindberg,
Wulf Dettmer 
,
Djordje Perić,
Antonio J. García-Loureiro,
Karol Kalna ,
Djordje Peric
,
Djordje Perić,
Antonio J. García-Loureiro,
Karol Kalna ,
Djordje Peric
Solid-State Electronics, Volume: 128, Pages: 17 - 24
Swansea University Authors:
Wulf Dettmer , Karol Kalna , Djordje Peric
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DOI (Published version): 10.1016/j.sse.2016.10.018
Abstract
3D Finite Element (FE) Monte Carlo (MC) simulation toolbox incorporating 2D Schrödinger equation quantum corrections is employed to simulate ID-VG characteristics of a 22 nm gate length gate-all-around (GAA) Si nanowire (NW) FET demonstrating an excellent agreement against experimental data at both...
| Published in: | Solid-State Electronics |
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| ISSN: | 0038-1101 |
| Published: |
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2017
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa30748 |
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| Abstract: |
3D Finite Element (FE) Monte Carlo (MC) simulation toolbox incorporating 2D Schrödinger equation quantum corrections is employed to simulate ID-VG characteristics of a 22 nm gate length gate-all-around (GAA) Si nanowire (NW) FET demonstrating an excellent agreement against experimental data at both low and high drain biases. We then scale the Si GAA NW according to the ITRS specifications to a gate length of 10 nm predicting that the NW FET will deliver the required on-current of above 1mA/μm and a superior electrostatic integrity with a nearly ideal sub-threshold slope of 68 mV/dec and a DIBL of 39 mV/V. In addition, we use a calibrated 3D FE quantum corrected drift-diffusion (DD) toolbox to investigate the effects of NW line-edge roughness (LER) induced variability on the sub-threshold characteristics (threshold voltage (VT), OFF-current (IOFF), sub-threshold slope (SS) and drain-induced-barrier-lowering (DIBL)) for the 22 nm and 10 nm gate length GAA NW FETs at low and high drain biases. We simulate variability with two LER correlation lengths (CL=20 nm and 10 nm) and three root mean square values (RMS=0.6,0.7 and 0.85 nm). |
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| College: |
Faculty of Science and Engineering |
| Start Page: |
17 |
| End Page: |
24 |