Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

Muniz, Antonio Martinez; Price, Anna; Ferreiro, Raul Valin; Aldegunde, Manuel; Barker, John

doi:10.1007/s10825-016-0851-0

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Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

Antonio Martinez Muniz

, Anna Price, Raul Valin Ferreiro, Manuel Aldegunde, John Barker

Journal of Computational Electronics, Volume: 15, Issue: 4, Pages: 1130 - 1147

Swansea University Authors: Antonio Martinez Muniz , Anna Price, Raul Valin Ferreiro

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DOI (Published version): 10.1007/s10825-016-0851-0

Abstract

This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mob...

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Published in:	Journal of Computational Electronics
ISSN:	1569-8025 1572-8137
Published:	Springer Science and Business Media LLC 2016
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URI:	https://cronfa.swan.ac.uk/Record/cronfa28934
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first_indexed	2016-06-17T18:24:44Z
last_indexed	2020-12-01T03:57:30Z
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spelling	2020-11-30T09:39:51.9374423 v2 28934 2016-06-17 Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 4b40ad260b5ec6fc6919f77adc337fc3 Anna Price Anna Price true false ccbca65c92ed0ff015af486c7529fa07 Raul Valin Ferreiro Raul Valin Ferreiro true false 2016-06-17 EEEG This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mobility and transfer characteristics for a variety of cross-sections at low and high drain bias. The nanowire cross-sectional area is shown to have a significant impact on the phonon-limited mobility and on the current reduction. In a study of narrow Si nanowires we have examined the spatially resolved power dissipation and the validity of Joule’s law. Our results show that only a fraction of the power is dissipated inside the drain region even for a relatively large simulated length extension (approximately 30 nm). When considering large source regions in the simulation domain, at low gate bias, a slight cooling of the source is observed. We have also studied the impact of the real part of phonon scattering self-energy on a narrow nanowire transistor. This real part is usually neglected in nanotransistor simulation, whereas we compute its impact on current–voltage characteristic and mobility. At low gate bias, the imaginary part strongly underestimated the current and the mobility by 50 %. At high gate bias, the two mobilities are similar and the effect on the current is negligible. Journal Article Journal of Computational Electronics 15 4 1130 1147 Springer Science and Business Media LLC 1569-8025 1572-8137 Silicon and III–V nanowire field effect transistors; Non-equilibrium Green’s functions; Electron–phonon scattering self-energies; Phonon-limited mobility; Local power dissipation 1 12 2016 2016-12-01 10.1007/s10825-016-0851-0 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University EPSRC 2020-11-30T09:39:51.9374423 2016-06-17T12:41:10.0878750 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Antonio Martinez Muniz 0000-0001-8131-7242 1 Anna Price 2 Raul Valin Ferreiro 3 Manuel Aldegunde 4 John Barker 5 0028934-02082016122804.pdf martinez2016.pdf 2016-08-02T12:28:04.9200000 Output 2579548 application/pdf Version of Record true Released under the terms of a Creative Commons Attribution 4.0 International License (CC-BY). true eng http://creativecommons.org/licenses/by/4.0
title	Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
spellingShingle	Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective Antonio Martinez Muniz Anna Price Raul Valin Ferreiro
title_short	Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
title_full	Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
title_fullStr	Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
title_full_unstemmed	Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
title_sort	Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
author_id_str_mv	cd433784251add853672979313f838ec 4b40ad260b5ec6fc6919f77adc337fc3 ccbca65c92ed0ff015af486c7529fa07
author_id_fullname_str_mv	cd433784251add853672979313f838ec_*_Antonio Martinez Muniz 4b40ad260b5ec6fc6919f77adc337fc3__Anna Price ccbca65c92ed0ff015af486c7529fa07_**_Raul Valin Ferreiro
author	Antonio Martinez Muniz Anna Price Raul Valin Ferreiro
author2	Antonio Martinez Muniz Anna Price Raul Valin Ferreiro Manuel Aldegunde John Barker
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container_title	Journal of Computational Electronics
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publishDate	2016
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doi_str_mv	10.1007/s10825-016-0851-0
publisher	Springer Science and Business Media LLC
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description	This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mobility and transfer characteristics for a variety of cross-sections at low and high drain bias. The nanowire cross-sectional area is shown to have a significant impact on the phonon-limited mobility and on the current reduction. In a study of narrow Si nanowires we have examined the spatially resolved power dissipation and the validity of Joule’s law. Our results show that only a fraction of the power is dissipated inside the drain region even for a relatively large simulated length extension (approximately 30 nm). When considering large source regions in the simulation domain, at low gate bias, a slight cooling of the source is observed. We have also studied the impact of the real part of phonon scattering self-energy on a narrow nanowire transistor. This real part is usually neglected in nanotransistor simulation, whereas we compute its impact on current–voltage characteristic and mobility. At low gate bias, the imaginary part strongly underestimated the current and the mobility by 50 %. At high gate bias, the two mobilities are similar and the effect on the current is negligible.
published_date	2016-12-01T03:35:18Z
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score	11.01753

Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

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