No Cover Image

Journal article 784 views

Gain characteristics of GaN quantum wells including many body effects

P. Rees, C. Cooper, P. Blood, P.M. Smowton, J. Hegarty, Paul Rees Orcid Logo

Electronics Letters, Volume: 31, Issue: 14, Start page: 1149

Swansea University Author: Paul Rees Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1049/el:19950826

Published in: Electronics Letters
ISSN: 00135194
Published: 1995
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa25621
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2016-01-13T01:55:41Z
last_indexed 2018-02-09T05:06:43Z
id cronfa25621
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2016-01-12T17:12:32.3284404</datestamp><bib-version>v2</bib-version><id>25621</id><entry>2016-01-12</entry><title>Gain characteristics of GaN quantum wells including many body effects</title><swanseaauthors><author><sid>537a2fe031a796a3bde99679ee8c24f5</sid><ORCID>0000-0002-7715-6914</ORCID><firstname>Paul</firstname><surname>Rees</surname><name>Paul Rees</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2016-01-12</date><deptcode>MEDE</deptcode><abstract/><type>Journal Article</type><journal>Electronics Letters</journal><volume>31</volume><journalNumber>14</journalNumber><paginationStart>1149</paginationStart><publisher/><issnPrint>00135194</issnPrint><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>1995</publishedYear><publishedDate>1995-12-31</publishedDate><doi>10.1049/el:19950826</doi><url>http://www.scopus.com/inward/record.url?eid=2-s2.0-0029637896&amp;amp;partnerID=MN8TOARS</url><notes>@article rees1995,title = Gain characteristics of GaN quantum wells including many body effects,journal = Electronics Letters,year = 1995,volume = 31,number = 14,pages = 1149-1150,author = Rees, P. and Cooper, C. and Blood, P. and Smowton, P.M. and Hegarty, J.</notes><college>COLLEGE NANME</college><department>Biomedical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>MEDE</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2016-01-12T17:12:32.3284404</lastEdited><Created>2016-01-12T17:12:32.1256391</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Biomedical Engineering</level></path><authors><author><firstname>P.</firstname><surname>Rees</surname><order>1</order></author><author><firstname>C.</firstname><surname>Cooper</surname><order>2</order></author><author><firstname>P.</firstname><surname>Blood</surname><order>3</order></author><author><firstname>P.M.</firstname><surname>Smowton</surname><order>4</order></author><author><firstname>J.</firstname><surname>Hegarty</surname><order>5</order></author><author><firstname>Paul</firstname><surname>Rees</surname><orcid>0000-0002-7715-6914</orcid><order>6</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2016-01-12T17:12:32.3284404 v2 25621 2016-01-12 Gain characteristics of GaN quantum wells including many body effects 537a2fe031a796a3bde99679ee8c24f5 0000-0002-7715-6914 Paul Rees Paul Rees true false 2016-01-12 MEDE Journal Article Electronics Letters 31 14 1149 00135194 31 12 1995 1995-12-31 10.1049/el:19950826 http://www.scopus.com/inward/record.url?eid=2-s2.0-0029637896&amp;partnerID=MN8TOARS @article rees1995,title = Gain characteristics of GaN quantum wells including many body effects,journal = Electronics Letters,year = 1995,volume = 31,number = 14,pages = 1149-1150,author = Rees, P. and Cooper, C. and Blood, P. and Smowton, P.M. and Hegarty, J. COLLEGE NANME Biomedical Engineering COLLEGE CODE MEDE Swansea University 2016-01-12T17:12:32.3284404 2016-01-12T17:12:32.1256391 Faculty of Science and Engineering School of Engineering and Applied Sciences - Biomedical Engineering P. Rees 1 C. Cooper 2 P. Blood 3 P.M. Smowton 4 J. Hegarty 5 Paul Rees 0000-0002-7715-6914 6
title Gain characteristics of GaN quantum wells including many body effects
spellingShingle Gain characteristics of GaN quantum wells including many body effects
Paul Rees
title_short Gain characteristics of GaN quantum wells including many body effects
title_full Gain characteristics of GaN quantum wells including many body effects
title_fullStr Gain characteristics of GaN quantum wells including many body effects
title_full_unstemmed Gain characteristics of GaN quantum wells including many body effects
title_sort Gain characteristics of GaN quantum wells including many body effects
author_id_str_mv 537a2fe031a796a3bde99679ee8c24f5
author_id_fullname_str_mv 537a2fe031a796a3bde99679ee8c24f5_***_Paul Rees
author Paul Rees
author2 P. Rees
C. Cooper
P. Blood
P.M. Smowton
J. Hegarty
Paul Rees
format Journal article
container_title Electronics Letters
container_volume 31
container_issue 14
container_start_page 1149
publishDate 1995
institution Swansea University
issn 00135194
doi_str_mv 10.1049/el:19950826
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Biomedical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Biomedical Engineering
url http://www.scopus.com/inward/record.url?eid=2-s2.0-0029637896&amp;partnerID=MN8TOARS
document_store_str 0
active_str 0
published_date 1995-12-31T03:30:38Z
_version_ 1763751219591905280
score 11.01409