Conference Paper/Proceeding/Abstract 1453 views
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
IEEE 16th International Semiconductor Laser Conference, Pages: 145 - 146
Swansea University Authors:
Paul Rees , Huw Summers
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/ISLC.1998.734178
Abstract
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
| Published in: | IEEE 16th International Semiconductor Laser Conference |
|---|---|
| ISBN: | 0-7803-4223-2 |
| ISSN: | 0899-9406 |
| Published: |
Nara, Japan
IEEE 16th International Semiconductor Laser Conference
1998
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa25603 |
| first_indexed |
2016-01-13T01:55:38Z |
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| last_indexed |
2019-10-14T13:36:26Z |
| id |
cronfa25603 |
| recordtype |
SURis |
| fullrecord |
<?xml version="1.0"?><rfc1807><datestamp>2019-10-14T11:37:42.2081291</datestamp><bib-version>v2</bib-version><id>25603</id><entry>2016-01-12</entry><title>High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber</title><swanseaauthors><author><sid>537a2fe031a796a3bde99679ee8c24f5</sid><ORCID>0000-0002-7715-6914</ORCID><firstname>Paul</firstname><surname>Rees</surname><name>Paul Rees</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>a61c15e220837ebfa52648c143769427</sid><ORCID>0000-0002-0898-5612</ORCID><firstname>Huw</firstname><surname>Summers</surname><name>Huw Summers</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2016-01-12</date><deptcode>EAAS</deptcode><abstract/><type>Conference Paper/Proceeding/Abstract</type><journal>IEEE 16th International Semiconductor Laser Conference</journal><paginationStart>145</paginationStart><paginationEnd>146</paginationEnd><publisher>IEEE 16th International Semiconductor Laser Conference</publisher><placeOfPublication>Nara, Japan</placeOfPublication><isbnElectronic>0-7803-4223-2</isbnElectronic><issnPrint>0899-9406</issnPrint><keywords/><publishedDay>31</publishedDay><publishedMonth>10</publishedMonth><publishedYear>1998</publishedYear><publishedDate>1998-10-31</publishedDate><doi>10.1109/ISLC.1998.734178</doi><url>http://www.scopus.com/inward/record.url?eid=2-s2.0-0032320570&amp;partnerID=MN8TOARS</url><notes>@article rees1998,title = High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber,journal = Conference Digest - IEEE International Semiconductor Laser Conference,year = 1998,pages = 145-146,author = Summers, H.D. and Molloy, C.H. and Smowton, P.M. and Rees, P. and Pierce, I. and Jones, D.R.</notes><college>COLLEGE NANME</college><department>Engineering and Applied Sciences School</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EAAS</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2019-10-14T11:37:42.2081291</lastEdited><Created>2016-01-12T17:12:22.8903799</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Biomedical Engineering</level></path><authors><author><firstname>H.D.</firstname><surname>Summers</surname><order>1</order></author><author><firstname>C.H.</firstname><surname>Molloy</surname><order>2</order></author><author><firstname>P.M.</firstname><surname>Smowton</surname><order>3</order></author><author><firstname>P.</firstname><surname>Rees</surname><order>4</order></author><author><firstname>I.</firstname><surname>Pierce</surname><order>5</order></author><author><firstname>D.R.</firstname><surname>Jones</surname><order>6</order></author><author><firstname>Paul</firstname><surname>Rees</surname><orcid>0000-0002-7715-6914</orcid><order>7</order></author><author><firstname>Huw</firstname><surname>Summers</surname><orcid>0000-0002-0898-5612</orcid><order>8</order></author></authors><documents/><OutputDurs/></rfc1807> |
| spelling |
2019-10-14T11:37:42.2081291 v2 25603 2016-01-12 High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber 537a2fe031a796a3bde99679ee8c24f5 0000-0002-7715-6914 Paul Rees Paul Rees true false a61c15e220837ebfa52648c143769427 0000-0002-0898-5612 Huw Summers Huw Summers true false 2016-01-12 EAAS Conference Paper/Proceeding/Abstract IEEE 16th International Semiconductor Laser Conference 145 146 IEEE 16th International Semiconductor Laser Conference Nara, Japan 0-7803-4223-2 0899-9406 31 10 1998 1998-10-31 10.1109/ISLC.1998.734178 http://www.scopus.com/inward/record.url?eid=2-s2.0-0032320570&partnerID=MN8TOARS @article rees1998,title = High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber,journal = Conference Digest - IEEE International Semiconductor Laser Conference,year = 1998,pages = 145-146,author = Summers, H.D. and Molloy, C.H. and Smowton, P.M. and Rees, P. and Pierce, I. and Jones, D.R. COLLEGE NANME Engineering and Applied Sciences School COLLEGE CODE EAAS Swansea University 2019-10-14T11:37:42.2081291 2016-01-12T17:12:22.8903799 Faculty of Science and Engineering School of Engineering and Applied Sciences - Biomedical Engineering H.D. Summers 1 C.H. Molloy 2 P.M. Smowton 3 P. Rees 4 I. Pierce 5 D.R. Jones 6 Paul Rees 0000-0002-7715-6914 7 Huw Summers 0000-0002-0898-5612 8 |
| title |
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber |
| spellingShingle |
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber Paul Rees Huw Summers |
| title_short |
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber |
| title_full |
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber |
| title_fullStr |
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber |
| title_full_unstemmed |
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber |
| title_sort |
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber |
| author_id_str_mv |
537a2fe031a796a3bde99679ee8c24f5 a61c15e220837ebfa52648c143769427 |
| author_id_fullname_str_mv |
537a2fe031a796a3bde99679ee8c24f5_***_Paul Rees a61c15e220837ebfa52648c143769427_***_Huw Summers |
| author |
Paul Rees Huw Summers |
| author2 |
H.D. Summers C.H. Molloy P.M. Smowton P. Rees I. Pierce D.R. Jones Paul Rees Huw Summers |
| format |
Conference Paper/Proceeding/Abstract |
| container_title |
IEEE 16th International Semiconductor Laser Conference |
| container_start_page |
145 |
| publishDate |
1998 |
| institution |
Swansea University |
| isbn |
0-7803-4223-2 |
| issn |
0899-9406 |
| doi_str_mv |
10.1109/ISLC.1998.734178 |
| publisher |
IEEE 16th International Semiconductor Laser Conference |
| college_str |
Faculty of Science and Engineering |
| hierarchytype |
|
| hierarchy_top_id |
facultyofscienceandengineering |
| hierarchy_top_title |
Faculty of Science and Engineering |
| hierarchy_parent_id |
facultyofscienceandengineering |
| hierarchy_parent_title |
Faculty of Science and Engineering |
| department_str |
School of Engineering and Applied Sciences - Biomedical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Biomedical Engineering |
| url |
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032320570&partnerID=MN8TOARS |
| document_store_str |
0 |
| active_str |
0 |
| published_date |
1998-10-31T03:49:09Z |
| _version_ |
1851091634505121792 |
| score |
11.089407 |

