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Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber

H. D. Summers, P. Rees, Paul Rees Orcid Logo, Huw Summers Orcid Logo

Applied Physics Letters, Volume: 71, Issue: 18, Pages: 2665 - 2667

Swansea University Authors: Paul Rees Orcid Logo, Huw Summers Orcid Logo

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DOI (Published version): 10.1063/1.120172

Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: 1997
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URI: https://cronfa.swan.ac.uk/Record/cronfa25413
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first_indexed 2016-01-06T01:57:42Z
last_indexed 2019-07-02T13:48:53Z
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spelling 2019-07-02T10:39:44.1524491 v2 25413 2016-01-05 Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber 537a2fe031a796a3bde99679ee8c24f5 0000-0002-7715-6914 Paul Rees Paul Rees true false a61c15e220837ebfa52648c143769427 0000-0002-0898-5612 Huw Summers Huw Summers true false 2016-01-05 MEDE Journal Article Applied Physics Letters 71 18 2665 2667 0003-6951 1077-3118 31 12 1997 1997-12-31 10.1063/1.120172 http://www.scopus.com/inward/record.url?eid=2-s2.0-0000544794&amp;partnerID=MN8TOARS @article summers1997,title = Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber,journal = Applied Physics Letters,year = 1997,volume = 71,number = 18,pages = 2665-2667,author = Summers, H.D. and Rees, P. COLLEGE NANME Biomedical Engineering COLLEGE CODE MEDE Swansea University 2019-07-02T10:39:44.1524491 2016-01-05T13:36:32.8997859 Faculty of Science and Engineering School of Engineering and Applied Sciences - Biomedical Engineering H. D. Summers 1 P. Rees 2 Paul Rees 0000-0002-7715-6914 3 Huw Summers 0000-0002-0898-5612 4
title Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber
spellingShingle Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber
Paul Rees
Huw Summers
title_short Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber
title_full Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber
title_fullStr Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber
title_full_unstemmed Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber
title_sort Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber
author_id_str_mv 537a2fe031a796a3bde99679ee8c24f5
a61c15e220837ebfa52648c143769427
author_id_fullname_str_mv 537a2fe031a796a3bde99679ee8c24f5_***_Paul Rees
a61c15e220837ebfa52648c143769427_***_Huw Summers
author Paul Rees
Huw Summers
author2 H. D. Summers
P. Rees
Paul Rees
Huw Summers
format Journal article
container_title Applied Physics Letters
container_volume 71
container_issue 18
container_start_page 2665
publishDate 1997
institution Swansea University
issn 0003-6951
1077-3118
doi_str_mv 10.1063/1.120172
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Biomedical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Biomedical Engineering
url http://www.scopus.com/inward/record.url?eid=2-s2.0-0000544794&amp;partnerID=MN8TOARS
document_store_str 0
active_str 0
published_date 1997-12-31T03:30:22Z
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score 11.037056

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