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The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices

D. Naidu, P.M. Smowton, H.D. Summers, Huw Summers Orcid Logo

Journal of Applied Physics, Volume: 108, Issue: 4, Start page: 043108

Swansea University Author: Huw Summers Orcid Logo

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DOI (Published version): 10.1063/1.3471812

Published in: Journal of Applied Physics
ISSN: 00218979
Published: 2010
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URI: https://cronfa.swan.ac.uk/Record/cronfa25319
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spelling 2016-01-05T13:33:29.0994077 v2 25319 2016-01-05 The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices a61c15e220837ebfa52648c143769427 0000-0002-0898-5612 Huw Summers Huw Summers true false 2016-01-05 EAAS Journal Article Journal of Applied Physics 108 4 043108 00218979 31 12 2010 2010-12-31 10.1063/1.3471812 http://www.scopus.com/inward/record.url?eid=2-s2.0-77956337210&amp;partnerID=MN8TOARS @article summers2010,title = The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices,journal = Journal of Applied Physics,year = 2010,volume = 108,number = 4,author = Naidu, D. and Smowton, P.M. and Summers, H.D. COLLEGE NANME Engineering and Applied Sciences School COLLEGE CODE EAAS Swansea University 2016-01-05T13:33:29.0994077 2016-01-05T13:33:28.9122065 Faculty of Science and Engineering School of Engineering and Applied Sciences - Biomedical Engineering D. Naidu 1 P.M. Smowton 2 H.D. Summers 3 Huw Summers 0000-0002-0898-5612 4
title The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
spellingShingle The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
Huw Summers
title_short The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
title_full The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
title_fullStr The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
title_full_unstemmed The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
title_sort The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
author_id_str_mv a61c15e220837ebfa52648c143769427
author_id_fullname_str_mv a61c15e220837ebfa52648c143769427_***_Huw Summers
author Huw Summers
author2 D. Naidu
P.M. Smowton
H.D. Summers
Huw Summers
format Journal article
container_title Journal of Applied Physics
container_volume 108
container_issue 4
container_start_page 043108
publishDate 2010
institution Swansea University
issn 00218979
doi_str_mv 10.1063/1.3471812
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Biomedical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Biomedical Engineering
url http://www.scopus.com/inward/record.url?eid=2-s2.0-77956337210&amp;partnerID=MN8TOARS
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active_str 0
published_date 2010-12-31T12:54:02Z
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