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Effects of Vacuum Annealing on the Conduction Characteristics of ZnO Nanosheets

Chris J. Barnett, Nathan A. Smith, Daniel R. Jones, Thierry Maffeis Orcid Logo, Richard Cobley Orcid Logo

Nanoscale Research Letters, Volume: 10, Issue: 1

Swansea University Authors: Thierry Maffeis Orcid Logo, Richard Cobley Orcid Logo

DOI (Published version): 10.1186/s11671-015-1066-1

Abstract

This paper is open acess and available in full at http://www.nanoscalereslett.com/content/10/1/368 .ZnO nanosheets are a relatively new form of nanostructure and have demonstrated potential as gas-sensing devices and dye sensitised solar cells. For integration into other devices, and when used as ga...

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Published in: Nanoscale Research Letters
Published: 2015
Online Access: http://www.nanoscalereslett.com/content/10/1/368
URI: https://cronfa.swan.ac.uk/Record/cronfa23391
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spelling 2016-02-01T16:42:00.1013600 v2 23391 2015-09-22 Effects of Vacuum Annealing on the Conduction Characteristics of ZnO Nanosheets 992eb4cb18b61c0cd3da6e0215ac787c 0000-0003-2357-0092 Thierry Maffeis Thierry Maffeis true false 2ce7e1dd9006164425415a35fa452494 0000-0003-4833-8492 Richard Cobley Richard Cobley true false 2015-09-22 EEEG This paper is open acess and available in full at http://www.nanoscalereslett.com/content/10/1/368 .ZnO nanosheets are a relatively new form of nanostructure and have demonstrated potential as gas-sensing devices and dye sensitised solar cells. For integration into other devices, and when used as gas sensors, the nanosheets are often heated. Here we study the effect of vacuum annealing on the electrical transport properties of ZnO nanosheets in order to understand the role of heating in device fabrication. A low cost, mass production method has been used for synthesis and characterisation is achieved using scanning electron microscopy (SEM), photoluminescence (PL), auger electron spectroscopy (AES) and nanoscale two-point probe. Before annealing, the measured nanosheet resistance displayed a non-linear increase with probe separation, attributed to surface contamination. Annealing to 300 °C removed this contamination giving a resistance drop, linear probe spacing dependence, increased grain size and a reduction in the number of n-type defects. Further annealing to 500 °C caused the n-type defect concentration to reduce further with a corresponding increase in nanosheet resistance not compensated by any further sintering. At 700 °C, the nanosheets partially disintegrated and the resistance increased and became less linear with probe separation. These effects need to be taken into account when using ZnO nanosheets in devices that require an annealing stage during fabrication or heating during use. Journal Article Nanoscale Research Letters 10 1 ZnO, Annealing, Contacts 31 12 2015 2015-12-31 10.1186/s11671-015-1066-1 http://www.nanoscalereslett.com/content/10/1/368 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University Institution Springer agreement 2016-02-01T16:42:00.1013600 2015-09-22T09:58:58.1963682 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Chris J. Barnett 1 Nathan A. Smith 2 Daniel R. Jones 3 Thierry Maffeis 0000-0003-2357-0092 4 Richard Cobley 0000-0003-4833-8492 5 0023391-01022016163947.pdf EffectsOfVacuumAnnealingBarnett2015.pdf 2016-02-01T16:39:47.9070000 Output 1415441 application/pdf Version of Record true 2016-02-01T00:00:00.0000000 true
title Effects of Vacuum Annealing on the Conduction Characteristics of ZnO Nanosheets
spellingShingle Effects of Vacuum Annealing on the Conduction Characteristics of ZnO Nanosheets
Thierry Maffeis
Richard Cobley
title_short Effects of Vacuum Annealing on the Conduction Characteristics of ZnO Nanosheets
title_full Effects of Vacuum Annealing on the Conduction Characteristics of ZnO Nanosheets
title_fullStr Effects of Vacuum Annealing on the Conduction Characteristics of ZnO Nanosheets
title_full_unstemmed Effects of Vacuum Annealing on the Conduction Characteristics of ZnO Nanosheets
title_sort Effects of Vacuum Annealing on the Conduction Characteristics of ZnO Nanosheets
author_id_str_mv 992eb4cb18b61c0cd3da6e0215ac787c
2ce7e1dd9006164425415a35fa452494
author_id_fullname_str_mv 992eb4cb18b61c0cd3da6e0215ac787c_***_Thierry Maffeis
2ce7e1dd9006164425415a35fa452494_***_Richard Cobley
author Thierry Maffeis
Richard Cobley
author2 Chris J. Barnett
Nathan A. Smith
Daniel R. Jones
Thierry Maffeis
Richard Cobley
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publishDate 2015
institution Swansea University
doi_str_mv 10.1186/s11671-015-1066-1
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hierarchy_top_title Faculty of Science and Engineering
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url http://www.nanoscalereslett.com/content/10/1/368
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description This paper is open acess and available in full at http://www.nanoscalereslett.com/content/10/1/368 .ZnO nanosheets are a relatively new form of nanostructure and have demonstrated potential as gas-sensing devices and dye sensitised solar cells. For integration into other devices, and when used as gas sensors, the nanosheets are often heated. Here we study the effect of vacuum annealing on the electrical transport properties of ZnO nanosheets in order to understand the role of heating in device fabrication. A low cost, mass production method has been used for synthesis and characterisation is achieved using scanning electron microscopy (SEM), photoluminescence (PL), auger electron spectroscopy (AES) and nanoscale two-point probe. Before annealing, the measured nanosheet resistance displayed a non-linear increase with probe separation, attributed to surface contamination. Annealing to 300 °C removed this contamination giving a resistance drop, linear probe spacing dependence, increased grain size and a reduction in the number of n-type defects. Further annealing to 500 °C caused the n-type defect concentration to reduce further with a corresponding increase in nanosheet resistance not compensated by any further sintering. At 700 °C, the nanosheets partially disintegrated and the resistance increased and became less linear with probe separation. These effects need to be taken into account when using ZnO nanosheets in devices that require an annealing stage during fabrication or heating during use.
published_date 2015-12-31T03:27:37Z
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