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Quantum transport of a nanowire field-effect transistor with complex phonon self–energy

R. Valin, M. Aldegunde, Antonio Martinez Muniz Orcid Logo, J. R. Barker

Journal of Applied Physics, Volume: 116, Issue: 8, Start page: 084507

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1063/1.4894066

Abstract

In this work, the impact of the real part of the phonon self-energy on the transfer characteristics of a silicon nanowire transistor is investigated. The physical effects of the real part of the self-energy are to create a broadening and a shift on the density of states. This increases the drain cur...

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Published in: Journal of Applied Physics
Published: 2014
URI: https://cronfa.swan.ac.uk/Record/cronfa22744
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first_indexed 2015-08-02T02:04:27Z
last_indexed 2020-08-19T02:38:18Z
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spelling 2020-08-18T15:26:00.3202083 v2 22744 2015-08-01 Quantum transport of a nanowire field-effect transistor with complex phonon self–energy cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2015-08-01 EEEG In this work, the impact of the real part of the phonon self-energy on the transfer characteristics of a silicon nanowire transistor is investigated. The physical effects of the real part of the self-energy are to create a broadening and a shift on the density of states. This increases the drain current in the sub–threshold region and decreases it in the above–the–threshold region. In the first region, the current is increased as a result of an increase of charge in the middle of the channel. In the second one, the electrostatic self–consistency or the enforcement of charge neutrality in the channel reduces the current because a substantial amount of electrons are under the first subband and have imaginary wave vectors. The change in the phonon–limited mobility due to the real part of self–energy is evaluated for a nanowire transistor and a nanowire in which there is not source to drain barrier. We also assess the validity of Mathiessen's rule using the self–consistent NEGF simulations and the Kubo–Greenwood formalism. Journal Article Journal of Applied Physics 116 8 084507 31 8 2014 2014-08-31 10.1063/1.4894066 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-08-18T15:26:00.3202083 2015-08-01T13:11:57.8507876 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering R. Valin 1 M. Aldegunde 2 Antonio Martinez Muniz 0000-0001-8131-7242 3 J. R. Barker 4
title Quantum transport of a nanowire field-effect transistor with complex phonon self–energy
spellingShingle Quantum transport of a nanowire field-effect transistor with complex phonon self–energy
Antonio Martinez Muniz
title_short Quantum transport of a nanowire field-effect transistor with complex phonon self–energy
title_full Quantum transport of a nanowire field-effect transistor with complex phonon self–energy
title_fullStr Quantum transport of a nanowire field-effect transistor with complex phonon self–energy
title_full_unstemmed Quantum transport of a nanowire field-effect transistor with complex phonon self–energy
title_sort Quantum transport of a nanowire field-effect transistor with complex phonon self–energy
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 R. Valin
M. Aldegunde
Antonio Martinez Muniz
J. R. Barker
format Journal article
container_title Journal of Applied Physics
container_volume 116
container_issue 8
container_start_page 084507
publishDate 2014
institution Swansea University
doi_str_mv 10.1063/1.4894066
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
description In this work, the impact of the real part of the phonon self-energy on the transfer characteristics of a silicon nanowire transistor is investigated. The physical effects of the real part of the self-energy are to create a broadening and a shift on the density of states. This increases the drain current in the sub–threshold region and decreases it in the above–the–threshold region. In the first region, the current is increased as a result of an increase of charge in the middle of the channel. In the second one, the electrostatic self–consistency or the enforcement of charge neutrality in the channel reduces the current because a substantial amount of electrons are under the first subband and have imaginary wave vectors. The change in the phonon–limited mobility due to the real part of self–energy is evaluated for a nanowire transistor and a nanowire in which there is not source to drain barrier. We also assess the validity of Mathiessen's rule using the self–consistent NEGF simulations and the Kubo–Greenwood formalism.
published_date 2014-08-31T03:26:57Z
_version_ 1763750987564056576
score 11.037581

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