Journal article 1250 views
Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs
,
Karol Kalna ,
Antonio Jesus Garcia-Loureiro,
Djordje Peric
IEEE Transactions on Electron Devices, Volume: 61, Issue: 2, Pages: 423 - 429
Swansea University Authors:
Wulf Dettmer , Karol Kalna , Djordje Peric
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/TED.2013.2296209
Abstract
Solutions of the 2-D Schrödinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrödinger equation-based quantum corrections are entirely calibrati...
| Published in: | IEEE Transactions on Electron Devices |
|---|---|
| ISSN: | 0018-9383 1557-9646 |
| Published: |
2014
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa21451 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Abstract: |
Solutions of the 2-D Schrödinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrödinger equation-based quantum corrections are entirely calibration free and can accurately describe quantum confinement effects in arbitrary device cross sections. The 3-D FE quantum corrected MC simulation is based on the tetrahedral decomposition of the simulation domain and the 2-D Schrödinger equation is solved at prescribed transverse planes of the 3-D mesh in the transport direction. We apply the method to study output characteristics of a nonplanar nanoscaled MOSFET, a{10.7}-nm gate length silicon-on-insulator FinFET, investigating 〈100〉 and 〈110〉 channel orientations. The results are then compared with those obtained from 3-D FE MC simulations with quantum corrections via the density gradient method showing very similar I-V characteristics but very different density distributions. |
|---|---|
| College: |
Faculty of Science and Engineering |
| Issue: |
2 |
| Start Page: |
423 |
| End Page: |
429 |