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Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N-Doped Graphene Quantum Dots

Libin Tang, Rongbin Ji, Xueming Li, Gongxun Bai, Chao Ping Liu, Jianhua Hao, Jingyu Lin, Hongxing Jiang, Kar Seng Teng, Zhibin Yang, Shu Ping Lau, Vincent Teng Orcid Logo

ACS Nano, Volume: 8, Issue: 6, Pages: 6312 - 6320

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1021/nn501796r

Abstract

Material that can emit broad spectral wavelengths covering deep ultraviolet, visible, and near-infrared is highly desirable. It can lead to important applications such as broadband modulators, photodetectors, solar cells, bioimaging, and fiber communications. However, there is currently no material...

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Published in: ACS Nano
ISSN: 1936-0851 1936-086X
Published: 2014
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URI: https://cronfa.swan.ac.uk/Record/cronfa21239
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spelling 2021-01-07T16:23:34.9370521 v2 21239 2015-05-08 Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N-Doped Graphene Quantum Dots 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2015-05-08 EEEG Material that can emit broad spectral wavelengths covering deep ultraviolet, visible, and near-infrared is highly desirable. It can lead to important applications such as broadband modulators, photodetectors, solar cells, bioimaging, and fiber communications. However, there is currently no material that meets such desirable requirement. Here, we report the layered structure of nitrogen-doped graphene quantum dots (N-GQDs) which possess broadband emission ranging from 300 to &#62;1000 nm. The broadband emission is attributed to the layered structure of the N-GQDs that contains a large conjugated system and provides extensive delocalized π electrons. In addition, a broadband photodetector with responsivity as high as 325 V/W is demonstrated by coating N-GQDs onto interdigital gold electrodes. The unusual negative photocurrent is observed which is attributed to the trapping sites induced by the self-passivated surface states in the N-GQDs. Journal Article ACS Nano 8 6 6312 6320 1936-0851 1936-086X 24 6 2014 2014-06-24 10.1021/nn501796r http://pubs.acs.org/doi/abs/10.1021/nn501796r COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2021-01-07T16:23:34.9370521 2015-05-08T09:40:13.5154867 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Libin Tang 1 Rongbin Ji 2 Xueming Li 3 Gongxun Bai 4 Chao Ping Liu 5 Jianhua Hao 6 Jingyu Lin 7 Hongxing Jiang 8 Kar Seng Teng 9 Zhibin Yang 10 Shu Ping Lau 11 Vincent Teng 0000-0003-4325-8573 12 0021239-08052015094527.pdf ACSN__broadband__accepted.pdf 2015-05-08T09:45:27.3330000 Output 1878470 application/pdf Accepted Manuscript true 2015-05-22T00:00:00.0000000 false
title Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N-Doped Graphene Quantum Dots
spellingShingle Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N-Doped Graphene Quantum Dots
Vincent Teng
title_short Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N-Doped Graphene Quantum Dots
title_full Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N-Doped Graphene Quantum Dots
title_fullStr Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N-Doped Graphene Quantum Dots
title_full_unstemmed Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N-Doped Graphene Quantum Dots
title_sort Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N-Doped Graphene Quantum Dots
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 Libin Tang
Rongbin Ji
Xueming Li
Gongxun Bai
Chao Ping Liu
Jianhua Hao
Jingyu Lin
Hongxing Jiang
Kar Seng Teng
Zhibin Yang
Shu Ping Lau
Vincent Teng
format Journal article
container_title ACS Nano
container_volume 8
container_issue 6
container_start_page 6312
publishDate 2014
institution Swansea University
issn 1936-0851
1936-086X
doi_str_mv 10.1021/nn501796r
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
url http://pubs.acs.org/doi/abs/10.1021/nn501796r
document_store_str 1
active_str 0
description Material that can emit broad spectral wavelengths covering deep ultraviolet, visible, and near-infrared is highly desirable. It can lead to important applications such as broadband modulators, photodetectors, solar cells, bioimaging, and fiber communications. However, there is currently no material that meets such desirable requirement. Here, we report the layered structure of nitrogen-doped graphene quantum dots (N-GQDs) which possess broadband emission ranging from 300 to &#62;1000 nm. The broadband emission is attributed to the layered structure of the N-GQDs that contains a large conjugated system and provides extensive delocalized π electrons. In addition, a broadband photodetector with responsivity as high as 325 V/W is demonstrated by coating N-GQDs onto interdigital gold electrodes. The unusual negative photocurrent is observed which is attributed to the trapping sites induced by the self-passivated surface states in the N-GQDs.
published_date 2014-06-24T03:25:09Z
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score 11.013148

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