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Optical driven electromechanical transistor based on tunneling effect

Leisheng Jin, Lijie Li Orcid Logo

Optics Letters, Volume: 40, Issue: 8, Start page: 1798

Swansea University Author: Lijie Li Orcid Logo

DOI (Published version): 10.1364/OL.40.001798

Abstract

A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical cu...

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Published in: Optics Letters
Published: 2015
URI: https://cronfa.swan.ac.uk/Record/cronfa20751
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first_indexed 2015-04-18T02:07:35Z
last_indexed 2018-02-09T04:57:37Z
id cronfa20751
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spelling 2017-02-27T10:34:14.9485392 v2 20751 2015-04-17 Optical driven electromechanical transistor based on tunneling effect ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2015-04-17 EEEG A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical current of the transistor is adjusted by the optical power. Coupled opto-electro-mechanical simulation has been performed. It is shown from the dynamic analysis that the stable working range of the transistor is much wider than that of the optical wave inside the cavity, i.e., the optical resonance enters nonperiodic states while the mechanical vibration of the ring is still periodic. Journal Article Optics Letters 40 8 1798 10 4 2015 2015-04-10 10.1364/OL.40.001798 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2017-02-27T10:34:14.9485392 2015-04-17T10:14:14.4366530 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Leisheng Jin 1 Lijie Li 0000-0003-4630-7692 2 0020751-18062015130821.pdf OL_manuscript_2015.pdf 2015-06-18T13:08:21.8330000 Output 429651 application/pdf Accepted Manuscript true 2015-06-18T00:00:00.0000000 false
title Optical driven electromechanical transistor based on tunneling effect
spellingShingle Optical driven electromechanical transistor based on tunneling effect
Lijie Li
title_short Optical driven electromechanical transistor based on tunneling effect
title_full Optical driven electromechanical transistor based on tunneling effect
title_fullStr Optical driven electromechanical transistor based on tunneling effect
title_full_unstemmed Optical driven electromechanical transistor based on tunneling effect
title_sort Optical driven electromechanical transistor based on tunneling effect
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Leisheng Jin
Lijie Li
format Journal article
container_title Optics Letters
container_volume 40
container_issue 8
container_start_page 1798
publishDate 2015
institution Swansea University
doi_str_mv 10.1364/OL.40.001798
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical current of the transistor is adjusted by the optical power. Coupled opto-electro-mechanical simulation has been performed. It is shown from the dynamic analysis that the stable working range of the transistor is much wider than that of the optical wave inside the cavity, i.e., the optical resonance enters nonperiodic states while the mechanical vibration of the ring is still periodic.
published_date 2015-04-10T03:24:33Z
_version_ 1763750836766244864
score 11.037581

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