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Sensor device and method of fabricating sensor device

Alex Lord Orcid Logo

Swansea University Author: Alex Lord Orcid Logo

Abstract

[en] A method of fabricating a sensor device from a substrate comprising a plurality of transistor components (4, 6), a dielectric layer (10) isolating the transistor components, a plurality of contact electrodes (12, 14) of a first conductive material, and at least one gate electrode (24) arranged...

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URI: https://cronfa.swan.ac.uk/Record/cronfa18718
first_indexed 2015-06-26T01:59:50Z
last_indexed 2024-11-14T11:18:44Z
id cronfa18718
recordtype SURis
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spelling 2023-06-02T14:47:45.5591556 v2 18718 2014-10-14 Sensor device and method of fabricating sensor device d547bad707e12f5a9f12d4fcbeea87ed 0000-0002-6258-2187 Alex Lord Alex Lord true false 2014-10-14 [en] A method of fabricating a sensor device from a substrate comprising a plurality of transistor components (4, 6), a dielectric layer (10) isolating the transistor components, a plurality of contact electrodes (12, 14) of a first conductive material, and at least one gate electrode (24) arranged on the dielectric layer is disclosed. The method comprises forming a trench in the substrate to expose the gate electrode (24), forming a seed layer of a semiconductor material in the trench, forming a plurality of elongate wires (30) of the semiconductor material on and extending from the seed layer, and forming a layer (32) of a second conductive material, at ends of the elongate wires in the trench. Patent / published patent application 0 0 0 0001-01-01 COLLEGE NANME COLLEGE CODE Swansea University 2023-06-02T14:47:45.5591556 2014-10-14T16:08:57.8754983 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Alex Lord 0000-0002-6258-2187 1
title Sensor device and method of fabricating sensor device
spellingShingle Sensor device and method of fabricating sensor device
Alex Lord
title_short Sensor device and method of fabricating sensor device
title_full Sensor device and method of fabricating sensor device
title_fullStr Sensor device and method of fabricating sensor device
title_full_unstemmed Sensor device and method of fabricating sensor device
title_sort Sensor device and method of fabricating sensor device
author_id_str_mv d547bad707e12f5a9f12d4fcbeea87ed
author_id_fullname_str_mv d547bad707e12f5a9f12d4fcbeea87ed_***_Alex Lord
author Alex Lord
author2 Alex Lord
format Patent
institution Swansea University
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 0
active_str 0
description [en] A method of fabricating a sensor device from a substrate comprising a plurality of transistor components (4, 6), a dielectric layer (10) isolating the transistor components, a plurality of contact electrodes (12, 14) of a first conductive material, and at least one gate electrode (24) arranged on the dielectric layer is disclosed. The method comprises forming a trench in the substrate to expose the gate electrode (24), forming a seed layer of a semiconductor material in the trench, forming a plurality of elongate wires (30) of the semiconductor material on and extending from the seed layer, and forming a layer (32) of a second conductive material, at ends of the elongate wires in the trench.
published_date 0001-01-01T03:33:20Z
_version_ 1851543624506933248
score 11.090091

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