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Journal article 1165 views

Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs

Antonio Martinez Muniz, Antonio Martinez Muniz Orcid Logo

Journal of Computational Electronics, Volume: 9, Issue: 3-4

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1007/s10825-010-0314-y

Published in: Journal of Computational Electronics
Published: 2010
URI: https://cronfa.swan.ac.uk/Record/cronfa10567
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first_indexed 2013-07-23T12:06:45Z
last_indexed 2018-02-09T04:39:27Z
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spelling 2013-06-10T12:00:14.2776469 v2 10567 2013-09-03 Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 EEEG Journal Article Journal of Computational Electronics 9 3-4 31 12 2010 2010-12-31 10.1007/s10825-010-0314-y COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-06-10T12:00:14.2776469 2013-09-03T06:38:40.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Antonio Martinez Muniz 1 Antonio Martinez Muniz 0000-0001-8131-7242 2
title Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs
spellingShingle Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs
Antonio Martinez Muniz
title_short Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs
title_full Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs
title_fullStr Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs
title_full_unstemmed Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs
title_sort Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 Antonio Martinez Muniz
Antonio Martinez Muniz
format Journal article
container_title Journal of Computational Electronics
container_volume 9
container_issue 3-4
publishDate 2010
institution Swansea University
doi_str_mv 10.1007/s10825-010-0314-y
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2010-12-31T03:11:59Z
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score 11.0133505

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