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Strain-Dependent Dielectric and Optical Properties of Monolayer MoS2 with Phase-Sensitive Surface Plasmon Resonance (SPR) Method

Xianzhu Zou, Min Li Orcid Logo, Haifei Lu, Xiaoyan Wen, Lijie Li Orcid Logo, Shuo Deng Orcid Logo, Zhiwen Ming

Photonics, Volume: 13, Issue: 6, Start page: 523

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.3390/photonics13060523

Abstract

Monolayer molybdenum disulfide (MoS2) holds great promise for strain-tunable optoelectronic devices. The strain-dependent dielectric function is a core parameter to characterize the tunability of optoelectronic properties. However, due to the extremely short light–matter interaction path length for...

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Published in: Photonics
ISSN: 2304-6732
Published: MDPI 2026
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URI: https://cronfa.swan.ac.uk/Record/cronfa72026
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However, due to the extremely short light–matter interaction path length for atomically thin materials, measurements are challenging. In this work, we measured the dielectric function of strained monolayer MoS2 using the surface plasmon resonance (SPR) method with the simulated annealing particle swarm optimization (SAPSO) algorithm. When the applied strain ranged from −0.23% (compressive strain) to +0.20% (tensile strain), the dielectric function at seven characteristic wavelengths around the exciton absorption peaks was extracted. Our results demonstrate that both the real part (ε2r) and the imaginary part (ε2i) of the dielectric function evolved almost linearly with the applied strain from −0.23% to +0.20%. Based on these results, we further obtained the strain-induced variations in the refractive index (n) and the extinction coefficient (k). At exciton absorption peak B (600 nm), the strain-induced change rate for n reached a maximum of about −0.0141%−1. At the rising edge of the B exciton absorption (580 nm), the strain-induced change rate for k reached a maximum of about −0.3261%−1. This work presents a quantitative extraction of strain-dependent dielectric function of monolayer MoS2 over excitonic band-edge wavelengths using phase SPR–SAPSO fitting. 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spelling v2 72026 2026-06-09 Strain-Dependent Dielectric and Optical Properties of Monolayer MoS2 with Phase-Sensitive Surface Plasmon Resonance (SPR) Method ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2026-06-09 ACEM Monolayer molybdenum disulfide (MoS2) holds great promise for strain-tunable optoelectronic devices. The strain-dependent dielectric function is a core parameter to characterize the tunability of optoelectronic properties. However, due to the extremely short light–matter interaction path length for atomically thin materials, measurements are challenging. In this work, we measured the dielectric function of strained monolayer MoS2 using the surface plasmon resonance (SPR) method with the simulated annealing particle swarm optimization (SAPSO) algorithm. When the applied strain ranged from −0.23% (compressive strain) to +0.20% (tensile strain), the dielectric function at seven characteristic wavelengths around the exciton absorption peaks was extracted. Our results demonstrate that both the real part (ε2r) and the imaginary part (ε2i) of the dielectric function evolved almost linearly with the applied strain from −0.23% to +0.20%. Based on these results, we further obtained the strain-induced variations in the refractive index (n) and the extinction coefficient (k). At exciton absorption peak B (600 nm), the strain-induced change rate for n reached a maximum of about −0.0141%−1. At the rising edge of the B exciton absorption (580 nm), the strain-induced change rate for k reached a maximum of about −0.3261%−1. This work presents a quantitative extraction of strain-dependent dielectric function of monolayer MoS2 over excitonic band-edge wavelengths using phase SPR–SAPSO fitting. The proposed method can be extended to the measurement of other atomically thin materials. Journal Article Photonics 13 6 523 MDPI 2304-6732 strain engineering; dielectric function; optical properties; phase-sensitive surface plasmon resonance; monolayer MoS2 28 5 2026 2026-05-28 10.3390/photonics13060523 COLLEGE NANME Aerospace Civil Electrical and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee National Natural Science Foundation of China (62304161, 12574515); Key R&D Program of Hubei Province (2024BAB009). 2026-06-09T09:49:42.7166179 2026-06-09T09:41:24.0072636 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Xianzhu Zou 1 Min Li 0000-0003-1037-3663 2 Haifei Lu 3 Xiaoyan Wen 4 Lijie Li 0000-0003-4630-7692 5 Shuo Deng 0009-0004-1079-1165 6 Zhiwen Ming 7 72026__36889__a8fbf3bb4e6d4ce4a11119c34a5e260c.pdf photonics-13-00523.pdf 2026-06-09T09:41:23.9822919 Output 1723005 application/pdf Version of Record true © 2026 by the authors. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license. true eng https://creativecommons.org/licenses/by/4.0/
title Strain-Dependent Dielectric and Optical Properties of Monolayer MoS2 with Phase-Sensitive Surface Plasmon Resonance (SPR) Method
spellingShingle Strain-Dependent Dielectric and Optical Properties of Monolayer MoS2 with Phase-Sensitive Surface Plasmon Resonance (SPR) Method
Lijie Li
title_short Strain-Dependent Dielectric and Optical Properties of Monolayer MoS2 with Phase-Sensitive Surface Plasmon Resonance (SPR) Method
title_full Strain-Dependent Dielectric and Optical Properties of Monolayer MoS2 with Phase-Sensitive Surface Plasmon Resonance (SPR) Method
title_fullStr Strain-Dependent Dielectric and Optical Properties of Monolayer MoS2 with Phase-Sensitive Surface Plasmon Resonance (SPR) Method
title_full_unstemmed Strain-Dependent Dielectric and Optical Properties of Monolayer MoS2 with Phase-Sensitive Surface Plasmon Resonance (SPR) Method
title_sort Strain-Dependent Dielectric and Optical Properties of Monolayer MoS2 with Phase-Sensitive Surface Plasmon Resonance (SPR) Method
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Xianzhu Zou
Min Li
Haifei Lu
Xiaoyan Wen
Lijie Li
Shuo Deng
Zhiwen Ming
format Journal article
container_title Photonics
container_volume 13
container_issue 6
container_start_page 523
publishDate 2026
institution Swansea University
issn 2304-6732
doi_str_mv 10.3390/photonics13060523
publisher MDPI
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Monolayer molybdenum disulfide (MoS2) holds great promise for strain-tunable optoelectronic devices. The strain-dependent dielectric function is a core parameter to characterize the tunability of optoelectronic properties. However, due to the extremely short light–matter interaction path length for atomically thin materials, measurements are challenging. In this work, we measured the dielectric function of strained monolayer MoS2 using the surface plasmon resonance (SPR) method with the simulated annealing particle swarm optimization (SAPSO) algorithm. When the applied strain ranged from −0.23% (compressive strain) to +0.20% (tensile strain), the dielectric function at seven characteristic wavelengths around the exciton absorption peaks was extracted. Our results demonstrate that both the real part (ε2r) and the imaginary part (ε2i) of the dielectric function evolved almost linearly with the applied strain from −0.23% to +0.20%. Based on these results, we further obtained the strain-induced variations in the refractive index (n) and the extinction coefficient (k). At exciton absorption peak B (600 nm), the strain-induced change rate for n reached a maximum of about −0.0141%−1. At the rising edge of the B exciton absorption (580 nm), the strain-induced change rate for k reached a maximum of about −0.3261%−1. This work presents a quantitative extraction of strain-dependent dielectric function of monolayer MoS2 over excitonic band-edge wavelengths using phase SPR–SAPSO fitting. The proposed method can be extended to the measurement of other atomically thin materials.
published_date 2026-05-28T09:49:44Z
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score 11.108223

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