Ghosh, S., Chen, C., Adams, F., Kappers, M. J., Wallis, D. J., & Oliver, R. A. (2023). Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. Ultramicroscopy, 254, p. 113833. doi:10.1016/j.ultramic.2023.113833
Chicago Style CitationGhosh, Saptarsi, Chen Chen, Francesca Adams, Menno J. Kappers, David J. Wallis, and Rachel A. Oliver. "Scanning Capacitance Microscopy of GaN-based High Electron Mobility Transistor Structures: A Practical Guide." Ultramicroscopy 254 (2023): 113833.
MLA CitationGhosh, Saptarsi, et al. "Scanning Capacitance Microscopy of GaN-based High Electron Mobility Transistor Structures: A Practical Guide." Ultramicroscopy 254 (2023): 113833.
Warning: These citations may not always be 100% accurate.