Guo, Y., Lu, H., & Robertson, J. (2021). Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions. ACS Applied Materials & Interfaces, 13(39), pp. 47226-47235. doi:10.1021/acsami.1c13583
Chicago Style CitationGuo, Yuzheng, Haichang Lu, and John Robertson. "Ab Initio Study of Hexagonal Boron Nitride As the Tunnel Barrier in Magnetic Tunnel Junctions." ACS Applied Materials & Interfaces 13, no. 39 (2021): 47226-47235.
MLA CitationGuo, Yuzheng, Haichang Lu, and John Robertson. "Ab Initio Study of Hexagonal Boron Nitride As the Tunnel Barrier in Magnetic Tunnel Junctions." ACS Applied Materials & Interfaces 13.39 (2021): 47226-47235.
Warning: These citations may not always be 100% accurate.