Zhou, Z., Jankovic, N., Batcup, S., & Igic, P. (2009). An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor. International Journal of Electronics, 96(7), pp. 767-779. doi:10.1080/00207210902847413
Chicago Style CitationZhou, Zhongfu, Nebojsa Jankovic, Steve Batcup, and Petar Igic. "An Advanced Physics-based Sub-circuit Model of a Punch-trough Insulated Gate Bipolar Transistor." International Journal of Electronics 96, no. 7 (2009): 767-779.
MLA CitationZhou, Zhongfu, Nebojsa Jankovic, Steve Batcup, and Petar Igic. "An Advanced Physics-based Sub-circuit Model of a Punch-trough Insulated Gate Bipolar Transistor." International Journal of Electronics 96.7 (2009): 767-779.
Warning: These citations may not always be 100% accurate.