Jennings, M., Renz, A. B., Li, F., Vavasour, O. J., Gammon, P. M., Dai, T., . . . Shah, V. A. (2021). Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36(5), p. 055006. doi:10.1088/1361-6641/abefa1

Jennings, Mike, et al. "Initial Investigations Into the MOS Interface of Freestanding 3C-SiC Layers for Device Applications." Semiconductor Science and Technology 36, no. 5 (2021): 055006.

Jennings, Mike, et al. "Initial Investigations Into the MOS Interface of Freestanding 3C-SiC Layers for Device Applications." Semiconductor Science and Technology 36.5 (2021): 055006.