Jennings, M., Arvanitopoulos, A. E., Antoniou, M., Perkins, S., Gyftakis, K. N., Mawby, P., & Lophitis, N. (2020). A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), pp. 54-65. doi:10.1109/jestpe.2019.2942714

Jennings, Mike, Anastasios E. Arvanitopoulos, Marina Antoniou, Samuel Perkins, Konstantinos N. Gyftakis, Philip Mawby, and Neophytos Lophitis. "A Defects-Based Model On the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes." IEEE Journal of Emerging and Selected Topics in Power Electronics 8, no. 1 (2020): 54-65.

Jennings, Mike, et al. "A Defects-Based Model On the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes." IEEE Journal of Emerging and Selected Topics in Power Electronics 8.1 (2020): 54-65.