Guo, Y., Zhang, Z., & Robertson, J. (2019). Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study. Microelectronic Engineering, p. 111039. doi:10.1016/j.mee.2019.111039
Chicago Style CitationGuo, Yuzheng, Zhaofu Zhang, and John Robertson. "Atomic Structure and Band Alignment At Al2O3/GaN, Sc2O3/GaN and La2O3/GaN Interfaces: A First-principles Study." Microelectronic Engineering 2019: 111039.
MLA CitationGuo, Yuzheng, Zhaofu Zhang, and John Robertson. "Atomic Structure and Band Alignment At Al2O3/GaN, Sc2O3/GaN and La2O3/GaN Interfaces: A First-principles Study." Microelectronic Engineering 2019: 111039.
Warning: These citations may not always be 100% accurate.