Kalna, K., Espineira, G., Nagy, D., Indalecio, G., Garcia-Loureiro, A. J., Kalna, K., & Seoane, N. (2019). Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET. IEEE Electron Device Letters, 40(4), pp. 510-513. doi:10.1109/LED.2019.2900494

Kalna, Karol, G. Espineira, D. Nagy, G. Indalecio, A. J. Garcia-Loureiro, K. Kalna, and N. Seoane. "Impact of Gate Edge Roughness Variability On FinFET and Gate-All-Around Nanowire FET." IEEE Electron Device Letters 40, no. 4 (2019): 510-513.

Kalna, Karol, et al. "Impact of Gate Edge Roughness Variability On FinFET and Gate-All-Around Nanowire FET." IEEE Electron Device Letters 40.4 (2019): 510-513.