Kalna, K., Duffy, S. J., Benbakhti, B., Boucherta, M., Zhang, W. D., Bourzgui, N. E., & Soltani, A. (2018). Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access, 6, pp. 42721-42728. doi:10.1109/access.2018.2861323

Kalna, Karol, Steven J. Duffy, Brahim Benbakhti, Mohammed Boucherta, Wei D. Zhang, Nour E. Bourzgui, and Ali Soltani. "Strain-Reduction Induced Rise in Channel Temperature At Ohmic Contacts of GaN HEMTs." IEEE Access 6 (2018): 42721-42728.

Kalna, Karol, et al. "Strain-Reduction Induced Rise in Channel Temperature At Ohmic Contacts of GaN HEMTs." IEEE Access 6 (2018): 42721-42728.