Guo, Y., Lu, H., & Robertson, J. (2018). Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2. Applied Physics Letters, 112(6), p. 062105. doi:10.1063/1.5008959

Guo, Yuzheng, Haichang Lu, and John Robertson. "Band Edge States, Intrinsic Defects, and Dopants in Monolayer HfS2 and SnS2." Applied Physics Letters 112, no. 6 (2018): 062105.

Guo, Yuzheng, Haichang Lu, and John Robertson. "Band Edge States, Intrinsic Defects, and Dopants in Monolayer HfS2 and SnS2." Applied Physics Letters 112.6 (2018): 062105.