Guo, Y., Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., . . . Chalker, P. R. (2017). Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping. Applied Physics Letters, 111(9), p. 092904. doi:10.1063/1.4991879
Chicago Style CitationGuo, Yuzheng, et al. "Enhanced Switching Stability in Ta2O5 Resistive RAM By Fluorine Doping." Applied Physics Letters 111, no. 9 (2017): 092904.
MLA CitationGuo, Yuzheng, et al. "Enhanced Switching Stability in Ta2O5 Resistive RAM By Fluorine Doping." Applied Physics Letters 111.9 (2017): 092904.
Warning: These citations may not always be 100% accurate.