Igic, P., & Faramehr, S. (2017). Analysis of GaN HEMTs Switching Transients Using Compact Model. IEEE Transactions on Electron Devices, 64(7), pp. 2900-2905. doi:10.1109/TED.2017.2703103
Chicago Style CitationIgic, Petar, and Soroush Faramehr. "Analysis of GaN HEMTs Switching Transients Using Compact Model." IEEE Transactions On Electron Devices 64, no. 7 (2017): 2900-2905.
MLA CitationIgic, Petar, and Soroush Faramehr. "Analysis of GaN HEMTs Switching Transients Using Compact Model." IEEE Transactions On Electron Devices 64.7 (2017): 2900-2905.
Warning: These citations may not always be 100% accurate.