Guo, Y., Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Potter, R. J., . . . Chalker, P. R. (2017). The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110(10), p. 102902. doi:10.1063/1.4978033
Chicago Style CitationGuo, Yuzheng, et al. "The Role of Nitrogen Doping in ALD Ta2O5 and Its Influence On Multilevel Cell Switching in RRAM." Applied Physics Letters 110, no. 10 (2017): 102902.
MLA CitationGuo, Yuzheng, et al. "The Role of Nitrogen Doping in ALD Ta2O5 and Its Influence On Multilevel Cell Switching in RRAM." Applied Physics Letters 110.10 (2017): 102902.
Warning: These citations may not always be 100% accurate.